High-Q plasmonic nanowire-on-mirror resonators by atomically smooth single-crystalline silver flakes

Author(s):  
Christian Schörner ◽  
Markus Lippitz
Optica ◽  
2018 ◽  
Vol 5 (10) ◽  
pp. 1279 ◽  
Author(s):  
Xianwen Liu ◽  
Alexander W. Bruch ◽  
Zheng Gong ◽  
Juanjuan Lu ◽  
Joshua B. Surya ◽  
...  

Author(s):  
Bjørn Pedersen

The diffractometer RESI, which is operated by the Department für Geo- und Umweltwissenschaften Sektion Kristallographie, Ludwig-Maximilians-Universität München and the Technische Universität München, is designed for high q-resolution, low background and best flux usage allowing optimum measurements of weak diffraction phenomena in a large portion of the reciprocal space on single crystalline samples.


Author(s):  
Joseph D. C. Peng

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.


2007 ◽  
Vol 32 (2-3) ◽  
pp. 123-126
Author(s):  
Y.-R. Nowicki-Bringuier ◽  
J. Claudon ◽  
C. Böckler ◽  
S. Reitzenstein ◽  
M. Kamp ◽  
...  

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  

2014 ◽  
Vol 29 (11) ◽  
pp. 1199
Author(s):  
LI Xiao-Shuai ◽  
WANG Zeng-Mei ◽  
ZHU Ming-Fang ◽  
WANG Shan-Peng ◽  
TAO Xu-Tang ◽  
...  
Keyword(s):  

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)


Author(s):  
Frank Bergner ◽  
Michael Schaper ◽  
Ralf Hammer ◽  
Manfred Jurisch ◽  
Andre Kleinwechter ◽  
...  

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