scholarly journals Fracture prediction of CFRP laminates subjected to CW laser heating and pre-tensile loads based on ANN

AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015010
Author(s):  
Jiawei Wang ◽  
Chongyu Lin ◽  
Guobin Feng ◽  
Bin Li ◽  
Lixiong Wu ◽  
...  
Keyword(s):  
Laser Heating ◽  
Fracture Prediction ◽  
Cfrp Laminates ◽  
Cw Laser

scholarly journals Mechanical modeling of bending stiffness degradation for soft-honeycomb sandwich structure under CW laser heating

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025201 ◽  
Author(s):  
Jiawei Wang ◽  
Bin Li ◽  
Yongxiang Zhu ◽  
Weiping Liu ◽  
Lixiong Wu ◽  
...  
Keyword(s):  
Laser Heating ◽  
Sandwich Structure ◽  
Bending Stiffness ◽  
Stiffness Degradation ◽  
Mechanical Modeling ◽  
Cw Laser ◽  
Honeycomb Sandwich ◽  
Honeycomb Sandwich Structure

Raman Scattering as a Temperature Frobe for Laser Heating of Si

1982 ◽  
Vol 17 ◽  
Author(s):  
Dimitry Kirillov ◽  
James L. Merz
Keyword(s):  
Raman Scattering ◽  
Laser Beam ◽  
Laser Heating ◽  
Laser Power ◽  
Raman Scattering Spectrum ◽  
Phonon Line ◽  
Cw Laser ◽  
Scattering Spectrum ◽  
Beam Heating ◽  
Laser Beam Heating

ABSTRACTThe frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.

Effects of Impurities on the Competition between Solid Phase Epitaxy and Random Crystallization In Ion-Implanted Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson ◽  
J.A. Roth ◽  
Y. Rytz-Froidevaux ◽  
J. Narayan
Keyword(s):  
Laser Heating ◽  
Crystallization Process ◽  
Solid Phase ◽  
Crystallization Rate ◽  
Solid Phase Epitaxy ◽  
Temperature Dependent ◽  
Kinetics Parameters ◽  
Time Resolved ◽  
Cw Laser ◽  
Ion Implanted

ABSTRACTThe temperature dependent competition between solid phase epitaxy and random crystallization in ion-implanted (As+, B+, F+, and BF2+) silicon films is investigated. Measurements of time-resolved reflectivity during cw laser heating show that in the As+, F+, and BF2+-implanted layers (conc 4×1020cm-3) epitaxial growth is disrupted at temperatures 1000°C. This effect is not observed in intrinsic films or in the B+-implanted layers. Correlation with results of microstructural analyses and computer simulation of the reflectivity experiment indicates that disruption of epitaxy is caused by enhancement of the random crystallization rate by arsenic and fluorine. Kinetics parameters for the enhanced crystallization process are determined; results are interpreted in terms of impurity-catalyzed nucleation during the random crystallization process.

Thermal Analysis of Cw Laser Annealing Beyond the Melt Temperature

1980 ◽  
Vol 1 ◽  
Author(s):  
S A. Kokorowski ◽  
G. L. Olson ◽  
L. D. Hess
Keyword(s):  
Thermal Analysis ◽  
Laser Heating ◽  
Laser Annealing ◽  
Sample Temperature ◽  
Experimental Measurements ◽  
Melt Temperature ◽  
Temperature Distributions ◽  
Cw Laser ◽  
Analytical Expressions

ABSTRACTWe present a thermal analysis which treats the problem of melting as it occurs during cw laser heating. Analytical expressions for sample temperature distributions are derived, and calculated results are compared to experimental measurements.

Fabrication of channel optical waveguides in glass by cw laser heating

1974 ◽  
Vol 45 (11) ◽  
pp. 4964-4968 ◽  
Author(s):  
T. G. Pavlopoulos ◽  
K. Crabtree
Keyword(s):  
Laser Heating ◽  
Optical Waveguides ◽  
Cw Laser

Raman microprobe study on temperature distribution during cw laser heating of silicon on sapphire

1986 ◽  
Vol 59 (4) ◽  
pp. 1350-1354 ◽  
Author(s):  
Masayoshi Yamada ◽  
Katsumi Nambu ◽  
Yutaka Itoh ◽  
Keiichi Yamamoto
Keyword(s):  
Temperature Distribution ◽  
Laser Heating ◽  
Cw Laser ◽  
Raman Microprobe

CW Laser Heating Effects and Mode Splitting of the Raman Spectra of the (Dy and Y)Ba2Cu3O7-δSuperconductors

1989 ◽  
Vol 28 (Part 1, No. 4) ◽  
pp. 598-603 ◽  
Author(s):  
Chien-Rong Huang ◽  
Yung-Sheng Chang ◽  
Ming-Chih Lee
Keyword(s):  
Raman Spectra ◽  
Laser Heating ◽  
Mode Splitting ◽  
Cw Laser ◽  
Heating Effects

Raman measurements of temperature during cw laser heating of silicon

1980 ◽  
Vol 51 (3) ◽  
pp. 1565-1568 ◽  
Author(s):  
H. W. Lo ◽  
A. Compaan
Keyword(s):  
Laser Heating ◽  
Cw Laser

Crystallization and Melting of Amorphous Silicon on a Microsecond Time Scale

1986 ◽  
Vol 74 ◽  
Author(s):  
G. L. Olson ◽  
J. A. Roth ◽  
E. Nygren ◽  
A. P. Pogany ◽  
J. S. Williams
Keyword(s):  
Film Thickness ◽  
Time Scale ◽  
Laser Heating ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Films ◽  
Random Nucleation ◽  
Cw Laser ◽  
Time Regime ◽  
Amorphous Si

AbstractMeasurements of the competition beween solid phase epitaxy, solid phase random nucleation, and melting in amorphous Si on a microsecond time scale are reported. We find that the behavior of amorphous Si under microsecond pulsed dye laser irradiation depends strongly on film thickness and temperature. In “thin” (≲1000 Å) films solid phase epitaxy is observed at temperatures up to and exceeding 1300°C with random nucleation dominating at T>1330° C; however, melting of amorphous Si does not occur. In contrast, in “thick” (2600 Å) amorphous films melting is observed at T˜1190°C. These results are discussed with respect to measurements obtained previously in the nanosecond time regime using Q-switched laser heating and in the 0.1–1 millisecond regime using “chopped beam” cw laser heating.

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