Raman microprobe study on temperature distribution during cw laser heating of silicon on sapphire

1986 ◽  
Vol 59 (4) ◽  
pp. 1350-1354 ◽  
Author(s):  
Masayoshi Yamada ◽  
Katsumi Nambu ◽  
Yutaka Itoh ◽  
Keiichi Yamamoto
Author(s):  
Yu Zou ◽  
Xiulan Huai ◽  
Fang Xin ◽  
Zhixiong Guo

Molecular dynamics simulations are carried out to study the thermal and mechanical phenomena of ultra-high heat flux conduction induced by ultrafast laser heating in thin Si films. Nanoscale Si films with various depths in heat flux direction are treated as a semi-infinite model for the study of ultrafast heat conduction. A distribution of internal heat source is applied to simulate the absorption of the laser energy in films and the induced temperature distribution. Stress distribution and the evolution of the displacement are calculated. Thermal waves are observed from the development of temperature distribution in the heat flux direction, though the average temperature of the simulated Si films increases monotonically. The average stress shows periodic oscillations. The time development of strain has the same trend as the average stress, and the net heat flux shows the same trend as the stress at different depths of the Si films in the direction of heat flux. This reveals a close relationship between stress and net heat flux in the Si films in the process of ultrafast laser heating.


AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025201 ◽  
Author(s):  
Jiawei Wang ◽  
Bin Li ◽  
Yongxiang Zhu ◽  
Weiping Liu ◽  
Lixiong Wu ◽  
...  

1982 ◽  
Vol 17 ◽  
Author(s):  
Dimitry Kirillov ◽  
James L. Merz

ABSTRACTThe frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.


Author(s):  
Swarup Bag ◽  
M. Ruhul Amin

In the present work, the deformation behavior in metallic film subjected to ultra-short laser heating is investigated. Static thermo-elastic behavior is predicted for 100 nm thin film of either single layer or multiple layers. The temperature distribution is estimated from dual-phase lag non-Fourier heat conduction model. The maximum temperature after single pulse is achieved 730 K. The temperature profile for this pulse laser is used to compute elastic stress and distortion field following the minimization of potential energy of the system. In the present work, the simulation has been proposed by developing 3D finite element based coupled thermo-elastic model using dual phase lag effect. The experimental basis of transient temperature distribution in ultra-short pulse laser is extremely difficult or nearly impossible, the model results have been validated with literature reported thermal results. Since the temperature distribution due to pulse laser source varies with time, the stress analysis is performed in incremental mode. Hence, a sequentially coupled thermo-mechanical model is developed that is synchronized between thermal and mechanical analysis in each time steps of transient problem. The maximum equivalent stress is achieved 0.3 GPa. Numerical results show that the predicted thermal stress may exceeds the tensile strength of the material and may lead to crack or damage the thin film.


1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson ◽  
J.A. Roth ◽  
Y. Rytz-Froidevaux ◽  
J. Narayan

ABSTRACTThe temperature dependent competition between solid phase epitaxy and random crystallization in ion-implanted (As+, B+, F+, and BF2+) silicon films is investigated. Measurements of time-resolved reflectivity during cw laser heating show that in the As+, F+, and BF2+-implanted layers (conc 4×1020cm-3) epitaxial growth is disrupted at temperatures 1000°C. This effect is not observed in intrinsic films or in the B+-implanted layers. Correlation with results of microstructural analyses and computer simulation of the reflectivity experiment indicates that disruption of epitaxy is caused by enhancement of the random crystallization rate by arsenic and fluorine. Kinetics parameters for the enhanced crystallization process are determined; results are interpreted in terms of impurity-catalyzed nucleation during the random crystallization process.


1980 ◽  
Vol 1 ◽  
Author(s):  
S A. Kokorowski ◽  
G. L. Olson ◽  
L. D. Hess

ABSTRACTWe present a thermal analysis which treats the problem of melting as it occurs during cw laser heating. Analytical expressions for sample temperature distributions are derived, and calculated results are compared to experimental measurements.


1981 ◽  
Vol 4 ◽  
Author(s):  
I.D. Calder ◽  
R. Sue ◽  
Emad-Eldin A.A. Aly

ABSTRACTA thermal model is developed for cw laser annealing of multilayer structures. Each layer has arbitrary thickness, thermal conductivity and optical properties. Steady state conditions with no phase transition are assumed. A procedure is presented for obtaining the temperature distribution in any system and explicit integral expressions are developed for the two and three layer cases. Results are calculated for the Si/glass and Si/SiO2 /Si systems.


AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015010
Author(s):  
Jiawei Wang ◽  
Chongyu Lin ◽  
Guobin Feng ◽  
Bin Li ◽  
Lixiong Wu ◽  
...  

1974 ◽  
Vol 45 (11) ◽  
pp. 4964-4968 ◽  
Author(s):  
T. G. Pavlopoulos ◽  
K. Crabtree

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