Aerosol-Assisted Chemical Vapour Deposition for Iron Selenide Thin Films from Single Source Ferrocene-Incorporated Selenourea Precursor in the Presence of Surfactants

2015 ◽  
Vol 68 (2) ◽  
pp. 298 ◽  
Author(s):  
Raja Azadar Hussain ◽  
Amin Badshah ◽  
Farida Yasmin ◽  
Malik Dilshad Khan ◽  
Muhammad Nawaz Tahir
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Absorption Spectrometry ◽  
13C Nmr Spectroscopy ◽  
Single Source ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vis Spectroscopy

This article presents the synthesis and characterisation (Fourier transform infrared spectroscopy, 1H NMR and 13C NMR spectroscopy, CHNS (carbon, hydrogen, nitrogen, sulfur) analysis, atomic absorption spectrometry, and single-crystal X-ray diffraction) of a single source molecular precursor 1-(2-fluorolbenzoyl)-3-(3-ferrocenylphenyl)selenourea (M2F). This precursor has been used for the fabrication of FeSe thin films by aerosol-assisted chemical vapour deposition (AACVD) in the presence of different concentrations of two different surfactants (triton and span) keeping all other conditions the same. Fabricated thin films have been characterised with powder X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The interaction of the surfactants with the precursor (M2F) has been evaluated with cyclic voltammetry and UV–vis spectroscopy.

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Semiconductor Thin Films

scholarly journals Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett
Keyword(s):  
Thin Films ◽  
Phase Space ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

scholarly journals Synthesis and properties of MoCl4complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe2and MoS2films

2018 ◽  
Vol 47 (7) ◽  
pp. 2406-2414 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid ◽  
Joshua Whittam
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Chloride Complexes ◽  
Single Source Precursors

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.

Examination of Titanium Oxides, Lead Oxides and Lead Titanates Using X-Ray Diffraction and Raman Spectroscopy

1993 ◽  
Vol 310 ◽  
Author(s):  
Lynnette D. Madsen ◽  
Louise Weaver
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Vapour Deposition ◽  
Mixed Oxides ◽  
Chemical Vapour ◽  
Titanium Oxides ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Oxides ◽  
Metalorganic Chemical Vapour Deposition

AbstractSingle oxides (with titanium or lead) deposited as thin films by low pressure metalorganic chemical vapour deposition were investigated by x-ray diffraction and Raman spectroscopy. Examination of mixed oxides (titanates) and silicates were also carried out using these techniques. The crystallographic nature of these thin films were examined and comparisons made to their bulk counterparts. The deposition and anneal conditions 600 for producing cubic PbTiO3 films are discussed briefly.

scholarly journals [Ge(TenBu)4] – a single source precursor for the chemical vapour deposition of germanium telluride thin films

2019 ◽  
Vol 48 (1) ◽  
pp. 117-124 ◽  
Author(s):  
Samantha L. Hawken ◽  
Ruomeng Huang ◽  
C. H. (Kees) de Groot ◽  
Andrew L. Hector ◽  
Marek Jura ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Germanium Telluride ◽  
Single Source Precursor

Reaction of activated germanium with nBu2Te2 in THF solution was shown to be more effective for the preparation of the germanium(iv) tellurolate compound, [Ge(TenBu)4], than reaction of GeCl4 with LiTenBu in THF.

Heterocyclic lead(II) thioureato complexes as single-source precursors for the aerosol assisted chemical vapour deposition of PbS thin films

2018 ◽  
Vol 479 ◽  
pp. 42-48 ◽  
Author(s):  
Kevin I.Y. Ketchemen ◽  
Sixberth Mlowe ◽  
Linda D. Nyamen ◽  
Ahmed A. Aboud ◽  
Matthew P. Akerman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

scholarly journals Metal-organic chemical vapour deposition of lithium manganese oxide thin films via single solid source precursor

2015 ◽  
Vol 33 (4) ◽  
pp. 725-731 ◽  
Author(s):  
K.O. Oyedotun ◽  
E. Ajenifuja ◽  
B. Olofinjana ◽  
B.A. Taleatu ◽  
E. Omotoso ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Lithium Manganese Oxide ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Manganese ◽  
Metal Organic

AbstractLithium manganese oxide thin films were deposited on sodalime glass substrates by metal organic chemical vapour deposition (MOCVD) technique. The films were prepared by pyrolysis of lithium manganese acetylacetonate precursor at a temperature of 420 °C with a flow rate of 2.5 dm3/min for two-hour deposition period. Rutherford backscattering spectroscopy (RBS), UV-Vis spectrophotometry, X-ray diffraction (XRD) spectroscopy, atomic force microscopy (AFM) and van der Pauw four point probe method were used for characterizations of the film samples. RBS studies of the films revealed fair thickness of 1112.311 (1015 atoms/cm2) and effective stoichiometric relationship of Li0.47Mn0.27O0.26. The films exhibited relatively high transmission (50 % T) in the visible and NIR range, with the bandgap energy of 2.55 eV. Broad and diffused X-ray diffraction patterns obtained showed that the film was amorphous in nature, while microstructural studies indicated dense and uniformly distributed layer across the substrate. Resistivity value of 4.9 Ω·cm was obtained for the thin film. Compared with Mn0.2O0.8 thin film, a significant lattice absorption edge shift was observed in the Li0.47Mn0.27O0.26 film.

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