Effect of off-stoichiometry on the thermal conductivity of amorphous GeTe

The reversible phase change of Germanium Telluride (GeTe) is essential for developing advanced non-volatile devices. We investigate off-stoichiometric effect on the thermal and structural properties of amorphous Ge$_{1-\delta}$Te (0 $\le$ $\delta$ $\le$ 0.12) via molecular dynamics. The structural optimization due to off-stoichiometry was taken into account with an empirical potential. Our simulated thermal conductivity is in the range of experimental observations. With increasing $\delta$, the thermal conductivity tends to be slightly reduced. Analysis on the coordinate number and the bond angle distribution indicates that the off-stoichiometric Ge$_{1-\delta}$Te still retain its ability of rapid phase transition. These results are helpful in reliable device design and modeling.

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation

Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) enter the global memory market as storage-class memory (SCM), holding great promise for future neuro-inspired computing and non-volatile photonic applications. The thermal stability of the amorphous phase of PCMs is a demanding property requiring further improvement. In this work, we focus on indium, an alloying ingredient extensively exploited in PCMs. Starting from the prototype GeTe alloy, we incorporated indium to form three typical compositions along the InTe-GeTe tie line: InGe3Te4, InGeTe2 and In3GeTe4. The evolution of structural details, and the optical properties of the three In-Ge-Te alloys in amorphous and crystalline form, was thoroughly analyzed via ab initio calculations. This study proposes a chemical composition possessing both improved thermal stability and sizable optical contrast for PCM-based non-volatile photonic applications.