The growth of metal excess lead chloride from the vapour phase

Abstract The 1.0 to 2.5 per cent of sulfur normally present in rubber products is oxidized with concentrated nitric acid-bromine reagent, followed by perchloric acid in the presence of excess lead nitrate. Sulfur as lead sulfate is precipitated and washed with acetone. The lead sulfate is dissolved in 50 per cent hydrochloric acid, and absorbance of the lead chloride complex is recorded at 270 mµ. Sulfur is calculated on the basis of the measured lead content of the precipitate. The high sensitivity puts the method in the micro-range. An experienced analyst can analyze 40 to 50 samples a day. Precision and accuracy are comparable to those of the conventional barium sulfate gravimetric method at the low sulfur concentrations normally found in rubber products.

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PbS Nanocrystals Made Using Excess Lead Chloride Have a Halide-Perovskite-Like Surface

Chemistry of Materials ◽

10.1021/acs.chemmater.1c02962 ◽

2021 ◽

Author(s):

Philippe B. Green ◽

Francisco Yarur Villanueva ◽

Karl Z. Demmans ◽

Christian J. Imperiale ◽

Minhal Hasham ◽

...

Keyword(s):

Lead Chloride ◽

Pbs Nanocrystals ◽

Excess Lead ◽

Halide Perovskite

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A POLAROGRAPHIC STUDY OF EXCESS LEAD DISSOLVED IN MOLTEN LEAD CHLORIDE

The Journal of Physical Chemistry ◽

10.1021/j100829a028 ◽

1961 ◽

Vol 65 (12) ◽

pp. 2222-2224 ◽

Cited By ~ 7

Author(s):

J. J. Egan

Keyword(s):

Lead Chloride ◽

Polarographic Study ◽

Excess Lead ◽

Molten Lead

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Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171419 ◽

1994 ◽

Vol 52 ◽

pp. 736-737

Author(s):

A. Carlsson ◽

J.-O. Malm ◽

A. Gustafsson

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Quantum Wires ◽

Vapour Phase ◽

Quantitative Information ◽

Lattice Imaging ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy ◽

High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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