scholarly journals Electron collisions with atoms, ions, molecules, and surfaces: Fundamental science empowering advances in technology

2016 ◽  
Vol 113 (26) ◽  
pp. 7026-7034 ◽  
Author(s):  
Klaus Bartschat ◽  
Mark J. Kushner

Electron collisions with atoms, ions, molecules, and surfaces are critically important to the understanding and modeling of low-temperature plasmas (LTPs), and so in the development of technologies based on LTPs. Recent progress in obtaining experimental benchmark data and the development of highly sophisticated computational methods is highlighted. With the cesium-based diode-pumped alkali laser and remote plasma etching of Si3N4 as examples, we demonstrate how accurate and comprehensive datasets for electron collisions enable complex modeling of plasma-using technologies that empower our high-technology–based society.

2020 ◽  
Vol 15 (01) ◽  
pp. C01004-C01004
Author(s):  
T. Akiyama ◽  
M.A. Van Zeeland ◽  
T.N. Carlstrom ◽  
R.L. Boivin ◽  
K.J. Brunner ◽  
...  

2018 ◽  
Vol 282 ◽  
pp. 126-131
Author(s):  
Kurt Wostyn ◽  
Karine Kenis ◽  
Hans Mertens ◽  
Adrian Vaisman Chasin ◽  
Andriy Hikavyy ◽  
...  

For horizontally stacked nanowires or-sheets to compete with finFET, the development of a robust inner spacer module is essential. These inner spacers are required to reduce the parasitic capacitance due to the overlap between the source/drain and gate regions. Here we propose an inner spacer integration scheme for Si gate-all-around (GAA) taking advantage of the selective oxidation and oxide removal of SiGe versus Si. Compared to thermal oxide, we found a very high SiGe-oxide etch rate in aqueous HF solutions. When using an NH3/NF3remote plasma, a reduction in etch rate was found for SiGe-oxide versus thermal oxide. We show Si0.75Ge0.25-oxide meets inner spacer requirements for leakage current and electrical breakdown field and finally demonstrate the proposed inner spacer integration scheme using a fin-shaped SiGe/Si multilayer topological-test-structure.


1979 ◽  
Vol 128 (6) ◽  
pp. 233 ◽  
Author(s):  
L.M. Biberman ◽  
V.S. Vorob'ev ◽  
I.T. Yakubov

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 28
Author(s):  
Anastasios I. Tsiotsias ◽  
Nikolaos D. Charisiou ◽  
Ioannis V. Yentekakis ◽  
Maria A. Goula

CO2 methanation has recently emerged as a process that targets the reduction in anthropogenic CO2 emissions, via the conversion of CO2 captured from point and mobile sources, as well as H2 produced from renewables into CH4. Ni, among the early transition metals, as well as Ru and Rh, among the noble metals, have been known to be among the most active methanation catalysts, with Ni being favoured due to its low cost and high natural abundance. However, insufficient low-temperature activity, low dispersion and reducibility, as well as nanoparticle sintering are some of the main drawbacks when using Ni-based catalysts. Such problems can be partly overcome via the introduction of a second transition metal (e.g., Fe, Co) or a noble metal (e.g., Ru, Rh, Pt, Pd and Re) in Ni-based catalysts. Through Ni-M alloy formation, or the intricate synergy between two adjacent metallic phases, new high-performing and low-cost methanation catalysts can be obtained. This review summarizes and critically discusses recent progress made in the field of bimetallic Ni-M (M = Fe, Co, Cu, Ru, Rh, Pt, Pd, Re)-based catalyst development for the CO2 methanation reaction.


2012 ◽  
Vol 206 (23) ◽  
pp. 4814-4821 ◽  
Author(s):  
H. Caquineau ◽  
L. Aiche ◽  
H. Vergnes ◽  
B. Despax ◽  
B. Caussat

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