scholarly journals Emergence of topological electronic phases in elemental lithium under pressure

2019 ◽  
Vol 116 (19) ◽  
pp. 9197-9201
Author(s):  
Stephanie A. Mack ◽  
Sinéad M. Griffin ◽  
Jeffrey B. Neaton

Lithium, a prototypical simple metal under ambient conditions, has a surprisingly rich phase diagram under pressure, taking up several structures with reduced symmetry, low coordination numbers, and even semiconducting character with increasing density. Using first-principles calculations, we demonstrate that some predicted high-pressure phases of elemental Li also host topological electronic structures. Beginning at 80 GPa and coincident with a transition to the previously predicted Pbca phase, we find Li to be a Dirac nodal line semimetal. We further calculate that Li retains linearly dispersing energy bands near the Fermi energy in subsequent predicted higher-pressure phases and that it exhibits a Lifshitz transition between two Cmca phases at 220 GPa. The Fd3¯m phase at 500 GPa forms buckled honeycomb layers that give rise to a Dirac crossing 1 eV below the Fermi energy. The well-isolated topological nodes near the Fermi level in these phases result from increasing p-orbital character with density at the Fermi level, itself a consequence of rising 1s core wavefunction overlap, and a preference for nonsymmorphic symmetries in the crystal structures favored at these pressures. Our results provide evidence that under pressure, bulk 3D materials with light elements, or even pure elemental systems, can undergo phase transitions hosting nontrivial topological phase transitions hosting nontrivial topological properties near the Fermi level with measurable consequences and that, through pressure, we can access these phases in elemental lithium.

1995 ◽  
Vol 378 ◽  
Author(s):  
R. M. Cohen ◽  
C. Y. Chen ◽  
W. M. Li ◽  
D. S. Simons ◽  
P. H. Chi

AbstractDuring organometallic vapor phase epitaxy of GaAs, the Fermi energy is found to be pinned ≈200 meV below the intrinsic Fermi energy on a (lOO)-oriented surface. This was determined by making the first comparison of Zn concentration, Nzn. obtained from growth with that obtained at equilibrium, all under the same nominal ambient conditions. Donor solubility has been found to be virtually unchanged during growth of n- or p-type GaAs, and this is strong evidence that the Fermi level remains pinned at essentially the same energy during growth of n- or p-type GaAs. Consistent with Fermi level pinning, we find (1) the NZn is supersaturated in the epilayer for the ambient growth conditions used, (2) a large excess concentration of positively charged Ga interstitials can be grown into n-type GaAs and which diffuses into nearby p-type layers, causing (3) the Zn diffusivity, DZn ∼10−13 cm2/s, out of buried npn layers to be essentially independent of the ambient conditions. Annealing of a heavily Zn-doped layer at the surface can lead to 10−16<DZn<10−13 cm2/s at T=800°C simply by varying the Zn partial pressure over its commonly used range. Use of In-doped spikes in n- and p-type GaAs suggest that interstitial point defects have a strong effect on the group III diffusion.


2020 ◽  
Vol 5 (1) ◽  
Author(s):  
Erjian Cheng ◽  
Wei Xia ◽  
Xianbiao Shi ◽  
Zhenhai Yu ◽  
Lin Wang ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Adeel Y. Abid ◽  
Yuanwei Sun ◽  
Xu Hou ◽  
Congbing Tan ◽  
Xiangli Zhong ◽  
...  

AbstractNontrivial topological structures offer a rich playground in condensed matters and promise alternative device configurations for post-Moore electronics. While recently a number of polar topologies have been discovered in confined ferroelectric PbTiO3 within artificially engineered PbTiO3/SrTiO3 superlattices, little attention was paid to possible topological polar structures in SrTiO3. Here we successfully create previously unrealized polar antivortices within the SrTiO3 of PbTiO3/SrTiO3 superlattices, accomplished by carefully engineering their thicknesses guided by phase-field simulation. Field- and thermal-induced Kosterlitz–Thouless-like topological phase transitions have also been demonstrated, and it was discovered that the driving force for antivortex formation is electrostatic instead of elastic. This work completes an important missing link in polar topologies, expands the reaches of topological structures, and offers insight into searching and manipulating polar textures.


2020 ◽  
Vol 101 (24) ◽  
Author(s):  
Mohsen Hafez-Torbati ◽  
Jun-Hui Zheng ◽  
Bernhard Irsigler ◽  
Walter Hofstetter

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