Impact of B2O3 on Physical, Optical Characteristics and Radiation Attenuation Factors of Borotellurite Glasses

Borotellurite glasses with a composition [(60-X)TeO2-(20+X)B2O3-10Li2O-10Bi2O3] where x= 5-20 in steps of 5 mol% have been synthesized. Glass density, molar volume, oxygen packing density, and many other physical parameters were measured. UV-spectra in the wave length range (200-800) nm have been measured for the whole glass series. The optical energy band gap Eopt , refractive index, and optical basicity were measured. The mass absorption coefficients (μm) are determined experimentally by the HPGe detector and compared with the theoretical values obtained by XCOM program and MCNP5 simulation code within (0.121–1.408) MeV photon energy range. Half value layer (HVL), effective atomic number and electron density (Zeff and Neff), and macroscopic removal cross-section (∑R) were evaluated. The sample [55TeO2 – 25B2O3 – 10Bi2O3 – 10Li2O] possess the highest values of (μm = 1.192 ± 0.033 cm2/g, Zeff = 56.12 e/atom and ∑ R = 0.101499 cm-1) at energy 121 keV also lower values of (HVL = 0.121 cm, TVL = 0.1 cm and MFP = 0.174 cm) at photon energy 121 keV, therefore this sample considered the best gamma ray shielding material among the prepared glasses.

Optical Response of GaAs0.75Sb0.25 Nanosheet for Dependent Pressure

The study analyzed the optical response of GaAs0.75Sb0.25 nanosheet under high pressure. It is the generalized gradient approximation (GGA) within the framework of density functional theory (DFT) was employed by means of a simulation program, which is called CASTEP. Under different pressure (P = 0, 2, and 4 GPa). Geometry optimized parameters were calculated for the nanosheet. The optical data alter in accordance with high pressure. The increase of pressure in the nanosheet led to a rise in p = 4 GPa and a decline in p = 2 GPa of the optical energy band gap, the static dielectric constant 𝜀1(0), and optical conductivity. The discussions of the real 𝜀1(𝜔) and imaginary 𝜀2(𝜔) sections of the dielectric function, optical band gap energy, optical absorption, and optical conductivity were included.

Enhanced Structural, Optical and Electrochemical Properties of Pulsed Laser Deposited Binary Zinc and Molybdenum Oxide Nanostructured Thin Films

The binary metal oxides of ZnO and MoO3 (ZMO) nanostructured thin films were prepared by pulsed laser deposition at different temperatures such as 298(as deposited), 623, 773 and 923K at 10Hz laser repetition rates for 30 min. The films were characterized by XRD, UV-Visible spectroscopy and IV measurements. The XRD discloses the amorphous nature of the film deposited below 773K. Few peaks which were seen in 923K sample revealed the formation of ZnMoO4 and Zn3Mo2O9 for the binary ZMO thin films. The optical energy band-gap was measured using Tauc plot and was found to be 2.4 to 2.7eV. These films were investigated by electrochemical impedance spectroscopy over a frequency range of 1Hz–1MHz, for measuring temperatures lying in 298K-473K domain. The frequency response of the imaginary impedance (Z′′) shows relaxation behavior along every measuring temperature. The binary ZMO pulsed laser deposited at high temperatures demonstrates better semiconducting behavior. The activation energy (Ea) which is minimum for high temperature PLD thin films was determined from the Arrhenius plot based on impedance.

Cerium-Oxide-Nanoparticle-Decorated Zinc Oxide with Enhanced Photocatalytic Degradation of Methyl Orange

Cerium-oxide-nanoparticle-decorated zinc oxide was successfully prepared using a simple one-pot hydrothermal technique with different weight% Ce doping. It was found that an increase in Ce doping has an effect on the optical energy band-gap tunability. Ce dopant provides electron trapping on Ce/ZnO nanocomposites and also acts as a surface defect generator during hydrothermal processing. Additionally, a bi-metal oxide heterojunction forms, which acts as a charge separator to obstruct charge recombination and to increase the photodegradation performance. It was found that the methyl orange (MO) degradation performance improved with an increase in Ce doping. The decomposition of MO went from 69.42% (pristine ZnO) to 94.06% (7% Ce/ZnO) after 60 min under fluorescent lamp illumination.

Nanocrystalline Cuco2se4 Thin Film Counter Electrode for Dye-Sensitized Solar Cells

Nanocrystalline CuCo2Se4 thin film have been deposited on over the micro slide by simplest route of successive ionic layer adsorption and reaction(SILAR) method. The CuCo2Se4 film was understand by Structural, morphological, and optical. The X-ray diffraction analyses confirm the formation of Cubic crystalline structure, than calculated grain size, dislocation density, and microstrain. The morphology of the film is homogeneous and agglomerated surface. The annealed CuCo2Se4 film are shows good optical absorption and the optical energy band gap energy is 1.90 eV, thus the suitable candidates for dye-Sensitized solar cell(DSSCs) application.

Study and Prepared of CuS Thin Films by Ultrasonic Nebulizer Method

Thin Film of copper sulfide with different thickness (100, 200 and 300) nm have been prepared on pre-heated glass substrates up to (330oC) by Ultrasonic Nebulizer Deposition (UND). The effect of thickness on the structural, optical, and electrical properties of films has been investigated. The results of the XRD show that the film which deposited with thickness CuS phase with (103) orientation. Atomic force measurement showed the grain size increase with thickness in the range of (76.91-101.32 nm). The optical properties of the films have been studied over a wavelength (370-1100)nm. The calculated optical energy band gap values were between 2.55 and 2.62eV, depending on the film thickness and in which phase crystallized. The effect of thickness on the electric properties the films have a positive Hall coefficient (p-type), the hall effect increases as thickness increase this due to inversely depend RH on carrier concentration.

Propiedades ópticas y estructurales de las películas de óxido de silicio rico en silicio obtenidas por la técnica HFCVD

In this work we present the results of the analysis obtained from the deposit and characterization of thin films of silicon rich oxide (SRO). The films were obtained by hot filament chemical vapor deposition (HFCVD) technique, such films were deposited on silicon substrates p-type. The deposit of thin films was realized considering different distances from source to substrate (DFS) which were 3, 4, 5 and 6 mm. The quantity of precursors (SiO2) was controlled by the distance from the filament to the source, which was 6 mm for this work, the filament was held at 2000°C. A constant 3-minute deposit time was maintained, and the hydrogen flow level was 10 sccm. The films thickness was obtained by using the profilometry technique, the thickness range was from 200 to 600 nm. The vibrational molecular modes of the SRO films were obtained by Fourier Transform Infrared Spectroscopy (FTIR). The films of 3 mm DFS exhibit an optical transmittance of 90%. The optical energy band gap of the thin films varies from 2.2 to 3.3 eV. When an annealing process at 1000°C was carried out for one hour, the SRO films increase their photoluminescence by an order of magnitude approximately.