Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
Sang Yeol Lee ◽  
Yuan Li ◽  
Jang-Sik Lee ◽  
J. K. Lee ◽  
M. Nastasi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Laser Deposition ◽  
Energy Band Gap ◽  
Sapphire Substrates ◽  
Optical Energy Band Gap

AbstractZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of ZnxCd1-xO as illustrated by Rutherford backscattering spectroscopy.

Energy Band Gap Shift of ZnS-ZnO Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 404 (1) ◽  
pp. 186-191 ◽  
Author(s):  
J.-K. Chung ◽  
J. W. Kim ◽  
D. Do ◽  
S. S. Kim ◽  
T. K. Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Energy Band Gap

Band Gap Optimization by Ga and S Additions in CuInSe2 for Solar Cell Absorber Applications

2011 ◽  
Vol 110-116 ◽  
pp. 1176-1180
Author(s):  
Badrul Munir ◽  
Kim Kyoo Ho
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Rf Magnetron Sputtering ◽  
Laser Deposition ◽  
Chalcopyrite Structure ◽  
Energy Band Gap ◽  
Absorption Coefficients ◽  
Optimum Energy

Gallium or sulphur additions in CuInSe2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The films energy band gap could be shifted from 1.04 to 1.68eV by adjusting the mole ratio of S/(S+Se) and In/(In+Ga). It is possible to obtain the optimum energy band gap by adding S solute or Ga at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In to provide better properties of CIS films.

Structural properties of the epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates by pulsed laser deposition

2011 ◽  
Vol 326 (1) ◽  
pp. 9-13 ◽  
Author(s):  
Se-Yun Kim ◽  
Sang-Yun Sung ◽  
Kwang-Min Jo ◽  
Joon-Hyung Lee ◽  
Jeong-Joo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Structural Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sapphire Substrates

Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

2013 ◽  
Vol 547 ◽  
pp. 59-62 ◽  
Author(s):  
Jie Jiang ◽  
Liping Zhu ◽  
Yang Li ◽  
Yanmin Guo ◽  
Weishun Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Band Gap Modulation

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

Terahertz Transmission Properties of VO2 Thin Films Deposited on c-and m-Plane Sapphire Substrates by Pulsed Laser Deposition

2013 ◽  
Vol 710 ◽  
pp. 25-28 ◽  
Author(s):  
Xiao Qiang Kou ◽  
Ji Ming Bian ◽  
Zhi Kun Zhang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Terahertz Time Domain Spectroscopy ◽  
Transmission Properties ◽  
Sapphire Substrates ◽  
Dense Distribution ◽  
Terahertz Transmission

Vanadium dioxide (VO2) films were grown on c-and m-plane sapphire substrates by pulsed laser deposition (PLD) technique with VO2ceramic target. The VO2films with preferred growth orientation and uniform dense distribution have been achieved on both substrates, as confirmed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The terahertz (THz) transmission properties of VO2thin films were studied by terahertz time-domain spectroscopy (THz-TDS). The results indicate that the THz transmission properties of VO2films are strongly influenced by the sapphire substrate orientation, suggesting that VO2films are ideal material candidates for THz modulation.

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

1994 ◽  
Vol 361 ◽  
Author(s):  
William Jo ◽  
T.W. Noh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Narrow Range ◽  
Pulsed Laser ◽  
Growth Behavior ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

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