SEM and PFM Study of Submicron PZT Films near Morphotropic Phase Boundary

The relationship between crystal structure and piezo-response was investigated in epitaxially grown PbZr1−xTixO3 (PZT) thin films on Pt(001)/MgO(001) with a thin PbTiO3 interlayer. Insertion of the interlayer resulted in significant relaxation ofthe strain that could be developed in the course of deposition of the PZT films, consequently leading us to single out only the effect of composition. Composition of the morphotropic phase boundary (MPB), at which tetragonal and rhombohedral phases are mixed with the same volume fraction, was found to be ∼0.55 in Ti/(Zr + Ti) ratio in our films, which is close to the value for bulk polycrystalline PZT (∼0.50). The piezoelectric response peaks were two times higher in the MPB regime than in the single phase regime due to structural instability caused by the coexistence of two phases. The results indicate that epitaxial PZT films having the MPB composition are advantageous over those of other compositions for nano-storage devices based on scanning force microscopy.

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Study of the Transverse Piezoelectric Coefficient of Pb(Zr,Ti)O3 Thin Films as a Function of Texture and Composition

MRS Proceedings ◽

10.1557/proc-596-535 ◽

1999 ◽

Vol 596 ◽

Cited By ~ 12

Author(s):

A. Seifert ◽

N. Ledermann ◽

S. Hiboux ◽

P. Muralt

Keyword(s):

Thin Films ◽

Phase Boundary ◽

Morphotropic Phase Boundary ◽

Piezoelectric Coefficient ◽

Sol Gel ◽

Pzt Thin Films ◽

Best Value ◽

Pzt Films ◽

Optimal Values

AbstractThe effective transverse piezoelectric coefficient was measured on 1 μm thick sol-gel processed Pb(Zr,Ti)O3 (PZT) thin films as a function of texture and composition. Optimal values were obtained with PZT films of {100} texture near the morphotropic phase boundary (53/47). The best value amounted to -12 C/m2

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Effect of Thickness and Annealing Temperature on the Properties of PZT Films at Morphotropic Phase Boundary Composition Prepared by Sol-Gel Spin-On Technique

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.895.17 ◽

2014 ◽

Vol 895 ◽

pp. 17-20

Author(s):

Jegatheesan Periyannan ◽

Muneewaran Muniyandi ◽

Giridharan Nambi Venkatesan

Keyword(s):

Phase Boundary ◽

Morphotropic Phase Boundary ◽

Sol Gel ◽

Preferential Orientation ◽

Morphotropic Phase Boundary Composition ◽

Si Substrates ◽

Boundary Composition ◽

Phase Boundary Composition ◽

Pzt Films ◽

Degree Of Crystallization

Pb (ZrxTi1-x)O3 films at morphotropic phase boundary composition (x=0.52) were deposited on Pt/Ti/SiO2/Si substrates by sol-gel spin on technique. Thickness of the films were varied up to 1μm by step-by-step crystallization process and annealed at 500, 600 and 700 °C. Films annealed at 500 °C had poor degree of crystallization for all the thicknesses while 600 and 700 °C annealed films were found to be well crystallized with a (111) preferential orientation. Also an enhanced degree of preferential orientation was observed on the films annealed at 600 °C compared to films annealed at 700 °C. Room temperature dielectric measurements showed higher dielectric constant values for the films annealed at 600 °C compared to films annealed at 700 °C. The remnant polarization (Pr) and coercive field (Ec) at an applied field of 160 kV/cm depicted that 600 °C annealed films had a higher Pr and lower Ec values compared with the 700 °C annealed films attributed to the higher degree of preferential orientation.

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