Composition characterization of Pb(Zr,Ti)O3 (PZT) thin films prepared by pulsed laser deposition: Ambient gas and substrate position effect

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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Preparation and characterization of PZT thin films deposited by pulsed laser deposition on template layer

Journal of the European Ceramic Society ◽

10.1016/s0955-2219(03)00394-7 ◽

2004 ◽

Vol 24 (6) ◽

pp. 1629-1632 ◽

Cited By ~ 7

Author(s):

Z.J. Wang ◽

H.Y. Bi ◽

H. Kokawa ◽

L. Zhang ◽

J. Tsaur ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Pzt Thin Films

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Pulsed laser deposition and characterization of PZT thin films

Applied Surface Science ◽

10.1016/s0169-4332(99)00415-8 ◽

2000 ◽

Vol 154-155 ◽

pp. 514-518 ◽

Cited By ~ 15

Author(s):

P Verardi ◽

M Dinescu ◽

F Craciun

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Pzt Thin Films

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Pulsed laser deposition and characterization of Nb-doped PZT thin films

10.1117/12.190796 ◽

1994 ◽

Author(s):

Beatriz Noheda ◽

Juan Rubio ◽

Jose A. Gonzalo de los Reyes ◽

C. Zaldo

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Pzt Thin Films

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Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105716 ◽

2021 ◽

Vol 127 ◽

pp. 105716

Author(s):

Tianzhen Guo ◽

Dan Wang ◽

Yajun Yang ◽

Xiaoyong Xiong ◽

Kelin Li ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition

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Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.75.202 ◽

2010 ◽

Vol 75 ◽

pp. 202-207

Author(s):

Victor Ríos ◽

Elvia Díaz-Valdés ◽

Jorge Ricardo Aguilar ◽

T.G. Kryshtab ◽

Ciro Falcony

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Chemical Characterization ◽

Laser Deposition ◽

Nominal Composition ◽

Deposition Parameters ◽

The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

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