Structural and Optical Properties of ZnS:Mn Films Grown by Pulsed Laser Deposition

2001 ◽  
Vol 667 ◽  
Author(s):  
K. M. Yeung ◽  
S. G. Lu ◽  
C. L. Mak ◽  
K. H. Wong
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Energy Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Yellow Emission ◽  
Wurtzite Phase ◽  
Zinc Blende ◽  
Zinc Blende Structure

ABSTRACTHigh-quality manganese-doped zinc sulfide (ZnS:Mn) thin films have been deposited on various substrates using pulsed laser deposition (PLD). Effects of back-filled Ar pressure and substrate temperature on the structural as well as optical properties of ZnS:Mn films were studied. Structural properties of these films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Photoluminescence (PL) and optical transmittance were used to characterize the optical properties of these films. Our results reveal that ZnS:Mn films were polycrystalline with a mixed phase structure consisting of both wurtzite and zinc-blende structure. The ratio of these two structures was strongly depended on the change of substrate temperature. Low substrate temperature facilitated the formation of zinc-blende structure while the wurtzite phase became dominant at high substrate temperature. ZnS:Mn films with preferred wurtzite structure were obtained at a substrate temperature as low as 450°C. An orange-yellow emission band was observed at ∼590 nm. As the substrate temperature increased, the peak of this PL band shifted to a shorter wavelength. Furthermore, shifts in the absorption edge and the energy gap due to the change in substrate temperature were also observed. The variation in these optical properties will be correlated to their structural change.

Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 1327-1330
Author(s):  
Ji Chul Jung ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Junction Diode ◽  
P Type

We investigated the effect of the substrate temperature on the electrical and the optical properties of ZnO/4H-SiC structures. The n-type ZnO layer was grown on p-type 4H-SiC substrate by pulsed laser deposition to form p-n hetero-junction diode structure. The n-type ZnO thin films were deposited by pulsed laser deposition at different temperatures of 200, 400, and 600 °C, respectively. It was shown from transmission line method (TLM) and auger electron spectroscopy (AES) data that the sheet resistance of ZnO on SiC was increases from ~760 Ω/square to ~4000 Ω/square as the deposition temperature increases and the oxygen outdiffusion decreases. The I-V characteristics with and without illumination has also been studied.

Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2467-2470 ◽  
Author(s):  
J. C. Caylor ◽  
M. S. Sander ◽  
A. M. Stacy ◽  
J. S. Harper ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Zinc Blende Structure

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.

Synthesis of Single Crystal Gallium Nitride Films on Sapphire by Pulsed Laser Deposition

1998 ◽  
Vol 526 ◽  
Author(s):  
A.K. Sharma ◽  
S. Oktyabrsky ◽  
K. Dovidenko ◽  
J. Narayan
Keyword(s):  
Gallium Nitride ◽  
High Resolution ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Extended Defects ◽  
Wurtzite Phase

AbstractPulsed laser deposition has been explored to synthesize gallium nitride films on c-plane sapphire by ablating a pressed GaN target in vacuum. The films were characterized by X-ray diffraction, and high resolution transmission electron microscopy to study the nature of epitaxy, growth, and defect content. Single crystal films with narrow o0-rocking curve width were deposited in the substrate temperature range 700-780°C. High resolution microscopy revealed uniform film surface at lower substrate temperature for films as thin as 150 nm. The predominant extended defects were found to be threading edge dislocations (Burgers vector 1/3<1120>) with the density ~1010 cm-2. The thickness of all these films were in the range 100-150 nm. The coexistence of zincblende phase of GaN alongwith wurtzite phase was found in the film deposited at 780°C. The stabilization of metastable zincblende phase at higher temperature point towards the noneqilibrium nature of laser ablation. These preliminary results indicate the potential of PLD to synthesize high quality GaN films free of hydrogen.

Influence of the Fluence and Substrate Temperature on the Structural and Optical Properties of CdSe Thin Films Prepared by Pulsed Laser Deposition

2011 ◽  
Vol 691 ◽  
pp. 134-138
Author(s):  
M.A. Hernández-Pérez ◽  
J.R. Aguilar-Hernández ◽  
Jorge Roberto Vargas-García ◽  
G.S. Contreras-Puente ◽  
E. Rangel-Salinas ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Hexagonal Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Tem Analysis ◽  
Zinc Blend

Cadmium Selenide (CdSe) thin films were prepared by pulsed laser deposition using a Nd:YAG laser (355 nm). Films were grown by ablating a sintered pure CdSe target with fluences from 0.1 to 1.5 J/cm2 on corning glass, silicon (100) and quartz substrates. Deposition chamber was maintained under vacuum pressure while substrate temperature was increased from room temperature to 500°C in order to control the crystalline phase. All the films show mirror-like surface morphology. Atomic force microscopy (AFM) images shown that films have very flat surfaces with RMS values around 0.7 and 5 nm for room temperature and 500°C respectively. The X-ray diffraction analysis proves the presence of the cubic zinc blend phase for the CdSe films deposited at low temperature, at 400°C and at higher substrate temperature the hexagonal phase is present. TEM analysis shows that at 100°C the films are constituted by particles with an average size of 30nm in diameter. The optical properties of the films were determined from the UV-transmission spectra. The estimated band gap values of the films deposited at room temperature and at 400°C (0.1 J/cm2) were 1.87 and 1.70 eV respectively.

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