Electronic States near the Fermi Level in the Antiferromagnetic and Ferromagnetic Spinels of Zn 1− x Cu x Cr 2 Se 4 ; 0.0 ≤ x ≤ 1.0

2002 ◽  
Vol 75 (4-5) ◽  
pp. 359-371
Author(s):  
M. Hidaka ◽  
N. Tokiwa ◽  
M. Yoshimura ◽  
H. Fujii ◽  
Jae-Young Choi ◽  
...  
Nanoscale ◽  
2019 ◽  
Vol 11 (38) ◽  
pp. 17894-17903 ◽  
Author(s):  
G. H. Silvestre ◽  
Wanderlã L. Scopel ◽  
R. H. Miwa

(Left) Localization of the electronic states near the Fermi level, and the electronic band structure projected on the S1 and S2 stripes. (Right) Transmission probabilites parallel (y) and perpendicular (x) to the S1/S2 borophene superlattice.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Qilin Guo ◽  
Yuriy Dedkov ◽  
Elena Voloshina

AbstractThe effect of Mn intercalation on the atomic, electronic and magnetic structure of the graphene/Cu(111) interface is studied using state-of-the-art density functional theory calculations. Different structural models of the graphene–Mn–Cu(111) interface are investigated. While a Mn monolayer placed between graphene and Cu(111) (an unfavorable configuration) yields massive rearrangement of the graphene-derived $$\pi $$ π bands in the vicinity of the Fermi level, the possible formation of a $$\hbox {Cu}_2$$ Cu 2 Mn alloy at the interface (a favorable configuration) preserves the linear dispersion for these bands. The deep analysis of the electronic states around the Dirac point for the graphene/$$\hbox {Cu}_2$$ Cu 2 Mn/Cu(111) system allows to discriminate between contributions from three carbon sublattices of a graphene layer in this system and to explain the bands’ as well as spins’ topology of the electronic states around the Fermi level.


2016 ◽  
Vol 18 (42) ◽  
pp. 29543-29548 ◽  
Author(s):  
S. F. Bychkov ◽  
A. G. Sokolov ◽  
M. P. Popov ◽  
A. P. Nemudry

Within the framework of the itinerant electron model, the dependence of the oxide nonstoichiometry on the oxygen activity was related to the density of electronic states near the Fermi level.


2001 ◽  
Vol 317-318 ◽  
pp. 542-545 ◽  
Author(s):  
N.L. Saini ◽  
S. Agrestini ◽  
D. Di Castro ◽  
Ziyu Wu ◽  
A. Bianconi ◽  
...  

2018 ◽  
Vol 3 (1) ◽  
Author(s):  
Thomas J. Nummy ◽  
Justin A. Waugh ◽  
Stephen P. Parham ◽  
Qihang Liu ◽  
Hung-Yu Yang ◽  
...  

1994 ◽  
Vol 339 ◽  
Author(s):  
M. C. Benjamin ◽  
C. Wang ◽  
R. S. Kern ◽  
R. F. Davis ◽  
R. J. Nemanich

ABSTRACTThis study presents the results of surface investigation of the heteroepitaxial AIN/SiC interface. The analytical tools employed included UPS, XPS, Auger spectroscopy, and LEED. The surface electronic states were characterized by uv photoemission obtained at surface normal. Conclusions drawn from this study are that the AIN/SiC structure results in a negative electron affinity surface which is extremely sensitive to defect density. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.


1993 ◽  
Vol 71 (15) ◽  
pp. 2477-2480 ◽  
Author(s):  
M. De Seta ◽  
F. Evangelisti

1996 ◽  
Vol 437 ◽  
Author(s):  
Eli Rotenberg ◽  
J. D. Denlinger ◽  
S. D. Kevan ◽  
K. W. Goodman ◽  
J. G. Tobin ◽  
...  

AbstractThe electronic states at the Fermi surface determine diverse properties such as magnetism, chemical bonding, and phonon-electron coupling. Using a conventional hemispherical analyzer at the ultraESCA beamline 7.0 of the Advanced Light Source, we have measured Fermi contours of the bulk and surface states of Cu(001) and Ag(001). For bulk states, we used uniform sampling in k-space by varying both the electron takeoff angle as well as the photon energy. Three-dimensional plots (in k-space) of bulk and surface states at the Fermi level can easily be achieved within one or two synchrotron shifts. Surface states, whose momentum is independent of k-perpendicular, are easily mapped if sufficiently dense angular sampling is performed. The states crossing the Fermi level at X in the surface Brillouin Zone of Cu(100) and Ag(100) are presented as examples.


2016 ◽  
Vol 2 (2) ◽  
pp. e1501283 ◽  
Author(s):  
Tianping Ying ◽  
Yueqiang Gu ◽  
Xiao Chen ◽  
Xinbo Wang ◽  
Shifeng Jin ◽  
...  

Anderson (disorder-induced) localization, proposed more than half a century ago, has inspired numerous efforts to explore the absence of wave diffusions in disordered media. However, the proposed disorder-induced metal-insulator transition (MIT), associated with the nonpropagative electron waves, has hardly been observed in three-dimensional (3D) crystalline materials, let alone single crystals. We report the observation of an MIT in centimeter-size single crystals of LixFe7Se8induced by lattice disorder. Both specific heat and infrared reflectance measurements reveal the presence of considerable electronic states in the vicinity of the Fermi level when the MIT occurs, suggesting that the transition is not due to Coulomb repulsion mechanism. The 3D variable range hopping regime evidenced by electrical transport measurements at low temperatures indicates the localized nature of the electronic states on the Fermi level. Quantitative analyses of carrier concentration, carrier mobility, and simulated density of states (DOS) fully support that LixFe7Se8is an Anderson insulator. On the basis of these results, we provide a unified DOS picture to explain all the experimental results, and a schematic diagram for finding other potential Anderson insulators. This material will thus serve as a rich playground for both theoretical and experimental investigations on MITs and disorder-induced phenomena.


2020 ◽  
Vol 62 (7) ◽  
pp. 1116
Author(s):  
А.С. Комолов ◽  
Э.Ф. Лазнева ◽  
Н.Б. Герасимова ◽  
А.В. Барамыгин ◽  
В.С. Соболев ◽  
...  

The results on comparing the peak structure of the density of unoccupied electronic states (DOUS) of ultrathin films of naphthalene anhydride-1,4,5,8-teracabonic acid (NTCDA) and naphthalene-1,8-dicarboxylic acid anhydride (NDCA) and of two types of phthalide-based films: 3,3-bis (phenyl) phthalide (DPP) and 3,3-bis (phenyl) phthalide-4 ′, 4′-dicarboxylic acid (DPP-DCA) are presented. The measurements of the structure of the unoccupied electronic states in the energy range from 5 eV to 20 eV above the Fermi level of the films studied having thickness of 8–10 nm were conducted using the total current spectroscopy (TCS) technique. Analysis of the experimental results was conducted using the model total current spectra and DOUS dependences generated using the calculated orbital energies of the studied molecules by means of the density functional theory (DFT) method at the B3LYP/6-31G(d) level. The difference in the DOUS spectra of NTCDA and NDCA films is characterized by the shift of the main DOUS maxima of the NTCDA film to lower energies by about 1 eV at energies less than 12.5 eV, and at higher energies the DOUS maxima are shifted by 1.5-2 eV. The energy positions of the maxima of the total current spectra of the DPP-DCA and DPP films practically do not change when using various substrates: highly ordered pyrolytic graphite (HOPG) and layer-by-layer deposited CdS. The relative intensities of the maxima differ when using different substrates. The characteristic shift of the maxima of the total current spectra of DPP-DCA films is about 1 eV at energies less than 12.5 eV above the Fermi level and 1.5-2 eV and at higher energies, compared with the position of the corresponding maxima of the DPP films.


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