Atomic structure of misfit dislocations in metal‐ceramic interfaces

1995 ◽  
Vol 71 (6) ◽  
pp. 1219-1239 ◽  
Author(s):  
V. Vitek ◽  
G. Gutekunst ◽  
J. Mayer ◽  
M. Rühle
1995 ◽  
Vol 149 (1) ◽  
pp. 95-103 ◽  
Author(s):  
W. P. Vellinga ◽  
J. Th. M. De Hosson

1989 ◽  
Vol 4 (4) ◽  
pp. 972-977 ◽  
Author(s):  
M. Kuwabara ◽  
J. C. H. Spence ◽  
M. Ruhle

The growth mechanism for small precipitates of Al2O3 formed by internal oxidation in the Nb–Al2O3 interface is studied in detail. The observations show that the Nb (001)/Al2O3 (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the Al2O3 side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed.


Author(s):  
U. Dahmen ◽  
N. Thangaraj ◽  
P. Lours

The investigation of the atomic structure of crystalline interfaces by HREM has recently become more prominent because of greatly improved resolution of modern electron microscopes, better means of sample preparation and wider availability of more generally applicable atomistic simulation procedures. As a result, a number of recent investigations have reported new and interesting features of crystalline interfaces and compared them with models based on atomistic, crystallographic or elastic theories. Examples of such features are stand-off dislocations in metal-ceramic and ceramic-ceramic interfaces, structural multiplicity of grain boundaries, solute segregation to selected facets, grain boundary microfaceting and dissociation and elastic distortion fields around interfacial ledges.


Author(s):  
D. Gerthsen

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.


Author(s):  
K. L. Merkle

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.


2003 ◽  
Vol 94 (3) ◽  
pp. 272-276 ◽  
Author(s):  
Amir Avishai ◽  
Christina Scheu ◽  
Wayne D. Kaplan

1991 ◽  
Vol 238 ◽  
Author(s):  
Young Keun Kim ◽  
Michael E. McHenry ◽  
Manuel P. Oliveria ◽  
Mark E. Eberhart

ABSTRACTA model based on the state-of-the-art, first-principles layer Korringa-Kohn-Rostoker (LKKR) method has proven to be very effective in describing the electronic and magnetic structure of metal/ceramic interfaces. We have performed self-consistent field computations incorporating spin polarization both for Fe/MgO superlattice (bulk technique) and for MgO/Fe/MgO sandwich (layer technique) systems. Muffin-tin potentials were employed for both materials in our computations. Iron layer was embedded in MgO, the host material, to have a [110](100)Fe / [100](100)MgO contact configuration. A large enhancement of magnetic moments has been found at the interface.


2010 ◽  
Vol 97 (12) ◽  
pp. 121914 ◽  
Author(s):  
H. Zhou ◽  
M. F. Chisholm ◽  
P. Pant ◽  
H. J. Chang ◽  
J. Gazquez ◽  
...  

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