On the determination of the threshold energy for atomic displacement in semiconductors

1980 ◽  
Vol 50 (1) ◽  
pp. 15-17 ◽  
Author(s):  
J. C. Bourgoin

The cathodoluminescence emission spectrum of Yb 3+ in zinc selenide has been observed following ion implantation. The complexity of the resulting spectrum has been interpreted in terms of several distinct trigonally distorted lattice sites. The crystal field parameters obtained in this way indicate an appreciable degree of covalency between the rare-earth ions and the lattice. It has been found that all Yb 3+ spectra in zinc selenide are damagesensitive and the resulting effects can be interpreted on the assumption that the excitation mechanism is indirect, resonance transfer between like rare-earth ions is occurring and the concentration of centres is being changed. In turn, these concentration changes are used to determine a threshold energy of 8.0 eV (≡ 199 keV for the incident electron energy) for zinc displacement and an activation energy for thermal annealing of 0.14 + 0.01 eV, tentatively assigned to zinc interstitial motion.


2000 ◽  
Vol 63 (1-2) ◽  
pp. 41-52 ◽  
Author(s):  
Samir Mitragotri ◽  
Joanne Farrell ◽  
Hua Tang ◽  
Takaaki Terahara ◽  
Joseph Kost ◽  
...  

1986 ◽  
Vol 34 (4) ◽  
pp. 2470-2474 ◽  
Author(s):  
B. Massarani ◽  
J. C. Bourgoin

2014 ◽  
Vol 47 (6) ◽  
pp. 2086-2089 ◽  
Author(s):  
Adam I. Stash ◽  
Vladimir G. Tsirelson

The new release of the computer program packageWinXPRO v.3xfor determination of the crystal properties from parameters of the multipole-modeled experimental electron density and anharmonic atomic displacement coefficients is described. The set of properties is significantly extended by using the density functional and information theories. In addition, a built-in multi-functional viewer and programs to display the output data, including the mapping of the chosen functional bonding descriptors onto surfaces of the other properties, are included.


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