Determination of threshold energy for hot electron interface state generation

ABSTRACTRedistribution of hydrogen caused by hot electron injection has been studied in large Al-gate capacitors using internal photemission followed by hydrogen depth profiling with the 15 N nuclear reaction. A large peak of hydrogen (∼ 1015 at /cm2) at the Al/SiO2 interface due to a hydrated layer on the surface of the SiO2 was found to act as a source of hydrogen during the photoinjection. A small fraction of the hydrogen released from this peak was found to be re-trapped near the Si/;SiO2 interface if a field of >1 MV/cm was applied to the SiO2 during the injection. Up to 2 × 1014 atoms/cm2 of hydrogen were found to be trapped at this interface for injected fluences up to 5 C/cm2. These results are discussed in terms of current models of interface state generation involving hydrogen.

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Charge Trapping and Interface State Generation by Avalanche Hot‐Electron Injection in Rapid Thermal NH 3 Annealed and Reoxidized SiO2 Films

Journal of The Electrochemical Society ◽

10.1149/1.2086822 ◽

1990 ◽

Vol 137 (6) ◽

pp. 1871-1876 ◽

Cited By ~ 11

Author(s):

Z. H. Liu ◽

P. S. Chen ◽

Y. C. Cheng ◽

P. T. Lai

Keyword(s):

Charge Trapping ◽

Electron Injection ◽

Interface State ◽

Hot Electron ◽

Sio2 Films ◽

Hot Electron Injection ◽

State Generation

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Interface State Generation Mechanism in MOSFET's during Substrate Hot Electron Injection

10.7567/ssdm.1988.c-2-5 ◽

1988 ◽

Author(s):

Naoki YASUDA ◽

Hiroshi NAKAMURA ◽

Kenji TANIGUCHI ◽

Chihiro HAMAGUCHI

Keyword(s):

Electron Injection ◽

Interface State ◽

Generation Mechanism ◽

Hot Electron ◽

Hot Electron Injection ◽

State Generation

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A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress

MRS Proceedings ◽

10.1557/proc-592-105 ◽

1999 ◽

Vol 592 ◽

Author(s):

Hao Guan ◽

Zhen Xu ◽

Byung Jin Cho ◽

M. F. Li ◽

Y. D. He

Keyword(s):

Damage Model ◽

Gate Oxide ◽

Interface State ◽

Hot Electron ◽

Hot Carriers ◽

Hot Carrier ◽

Interface Damage ◽

Breakdown Mechanism ◽

State Generation ◽

Thin Gate Oxide

ABSTRACTThe quasi-breakdown (QB) in ultra thin gate oxide is investigated through the observation of defect generation during high field F-N stress and substrate hot hole and hot electron stresses. The interface trap density increases during stress and reaches to a same critical amount at the onset point of QB regardless of stress current density and stressing carrier type. The experiments also show that hot carriers are much more effective to trigger QB than F-N electrons at the same current level. This can be ascribed to the fact that hot carrier has much higher interface state generation rate than F-N electron does. All results consistently support the interface damage model for the QB occurrence.

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