The Effect of Temperature on the Operation of Quantum Well Laser: A Simulation Study Based on Three-Level Rate Equations

A theoretical (using rate equations) and experimental study of the nonlinear dynamics of a distributed feedback multiple quantum well laser diode is presented. The analysis is performed under direct modulation. Period doubling and period tripling are identified in both the measurements and simulations. Period doubling is found over a wide range of modulation frequencies in the laser. Computational results using rate equations show good agreement with the experimental results.

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Simulation study of strained layer CdxZn1−xTe–ZnTe quantum well laser structures

Materials Science and Engineering B ◽

10.1016/s0921-5107(98)00262-1 ◽

1998 ◽

Vol 57 (1) ◽

pp. 71-75 ◽

Cited By ~ 2

Author(s):

P.R Vaya ◽

R Srinivasan

Keyword(s):

Quantum Well ◽

Simulation Study ◽

Strained Layer ◽

Quantum Well Laser

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Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model

VLSI Design ◽

10.1155/1998/58451 ◽

1998 ◽

Vol 6 (1-4) ◽

pp. 367-371 ◽

Cited By ~ 1

Author(s):

F. Oyafuso ◽

P. von Allmen ◽

M. Grupen ◽

K. Hess

Keyword(s):

Matrix Element ◽

Quantum Well ◽

Electronic Band Structure ◽

Rate Equations ◽

Band Model ◽

Drift Diffusion ◽

Constant Matrix ◽

Electronic Band ◽

Quantum Well Laser ◽

Momentum Matrix Element

Effects of non-parabolicity and band-warping of the energy dispersion are entered in a quantum well laser simulator (MINILASE-II), which self-consistently solves Schödinger's equation, Poisson's equation, the drift diffusion equations, and the photon rate equations. An eight band k.p model is used to determine the electronic band structure for a strained-layer In.2Ga.8As/Al.1Ga.9As system. The k.p calculation is performed independently of the laser simulator, and exported to MINILASE-II in the form of a density of states and an energydependent averaged momentum matrix element. The results obtained for the gain and modulation response are compared to those obtained from a parabolic band model with a constant matrix element.

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The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures

(CLEO). Conference on Lasers and Electro-Optics, 2005. ◽

10.1109/cleo.2005.201690 ◽

2005 ◽

Cited By ~ 2

Author(s):

D.J. Palmer ◽

P.M. Smowton ◽

P. Blood ◽

J.-Y. Yeh ◽

L.J. Mawst ◽

...

Keyword(s):

Quantum Well ◽

Effect Of Temperature ◽

Quantum Well Laser

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OPTOELECTRONIC PROPERTIES OF STRAINED WURTZITE GaN QUANTUM-WELL LASERS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156498000464 ◽

1998 ◽

Vol 09 (04) ◽

pp. 1189-1209

Author(s):

JIN WANG ◽

J. B. JEON ◽

K. W. KIM ◽

M. A. LITTLEJOHN

Keyword(s):

Quantum Well ◽

Optical Gain ◽

Energy Band Structure ◽

Quantum Well Lasers ◽

Rate Equations ◽

Threshold Condition ◽

Quantum Well Laser ◽

Self Consistent ◽

Piezoelectric Fields ◽

Self Consistency

Fundamental optical properties of strained wurtzite GaN quantum-well laser are calculated and evaluated near the threshold condition. The formalism is based on a self-consistent methodology that couples an envelope-function Hamiltonian for band structures with photon-carrier rate equations. Details of energy band structure, optical gain, and modulation response are studied comprehensively under the effects of strain-induced piezoelectric fields, bandgap renormalization, and the carrier capture processes. Comparisons between different approximations show that self-consistency is essential to accurately simulate pseudomorphically strained wurtzite GaN quantum-well lasers.

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