Exploring the Asymmetric Characteristics of a Double Gate MOSFET with Linearly Graded Binary Metal Alloy Gate Electrode for Enhanced Performance

IETE Journal of Research ◽

10.1080/03772063.2016.1176542 ◽

2016 ◽

Vol 62 (6) ◽

pp. 786-794 ◽

Author(s):

Navjeet Bagga ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Metal Alloy ◽

Double Gate ◽

Gate Electrode ◽

Binary Metal ◽

Double Gate Mosfet

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Analytical Modeling and Performance Characterization of a Double Gate MOSFET with Dielectric Pockets Incorporating Work Function Engineered Binary Metal Alloy Gate Electrode for Subdued SCEs

IETE Technical Review ◽

10.1080/02564602.2017.1339576 ◽

2017 ◽

Vol 35 (5) ◽

pp. 506-513 ◽

Author(s):

Ranita Saha ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Work Function ◽

Analytical Modeling ◽

Metal Alloy ◽

Double Gate ◽

Gate Electrode ◽

Performance Characterization ◽

Binary Metal ◽

Double Gate Mosfet ◽

And Performance

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Analytical potential distribution model of symmetric double gate underlap MOSFET with binary metal alloy as gate electrode for subdued sces

2013 Annual International Conference on Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy ◽

10.1109/aicera-icmicr.2013.6575979 ◽

2013 ◽

Author(s):

Saheli Sarkhel ◽

Bibhas Manna ◽

Anindya Jana ◽

Kousik Naskar ◽

Subir Kumar Sarkar

Keyword(s):

Potential Distribution ◽

Metal Alloy ◽

Distribution Model ◽

Double Gate ◽

Gate Electrode ◽

Binary Metal ◽

Analytical Potential ◽

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Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2220143 ◽

2012 ◽

Vol 59 (12) ◽

pp. 3280-3287 ◽

Author(s):

Bibhas Manna ◽

Saheli Sarkhel ◽

Nurul Islam ◽

S. Sarkar ◽

Subir Kumar Sarkar

Keyword(s):

Metal Alloy ◽

Gate Electrode ◽

Short Channel ◽

Binary Metal ◽

Spatial Composition

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Novel Linear Graded Binary Metal Alloy PαQ1-α Gate Electrode and Middle N+ Pocket Si0.5Ge0.5 Vertical TFET for High Performance

Silicon ◽

10.1007/s12633-020-00654-4 ◽

2020 ◽

Author(s):

Jeetendra Singh ◽

Girish Wadhawa

Keyword(s):

High Performance ◽

Metal Alloy ◽

Gate Electrode ◽

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Work Function Engineering With Linearly Graded Binary Metal Alloy Gate Electrode for Short-Channel SOI MOSFET

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2011.2177669 ◽

2012 ◽

Vol 11 (3) ◽

pp. 472-478 ◽

Author(s):

Sanjoy Deb ◽

N. Basanta Singh ◽

Nurul Islam ◽

Subir Kumar Sarkar

Keyword(s):

Work Function ◽

Metal Alloy ◽

Gate Electrode ◽

Short Channel ◽

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Compact 2D threshold voltage modeling and performance analysis of ternary metal alloy work-function-engineered double-gate MOSFET

Journal of Computational Electronics ◽

10.1007/s10825-017-1015-6 ◽

2017 ◽

Vol 16 (3) ◽

pp. 648-657 ◽

Author(s):

Priyanka Saha ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Work Function ◽

Threshold Voltage ◽

Metal Alloy ◽

Double Gate ◽

Double Gate Mosfet ◽

Ternary Metal ◽

And Performance

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Threshold Voltage Modelling of Linearly Graded Binary Metal Alloy Gate Electrode with DP MOSFET

IETE Journal of Research ◽

10.1080/03772063.2018.1508374 ◽

2018 ◽

Vol 66 (4) ◽

pp. 546-555

Author(s):

Priyanka Saha ◽

Subir Kumar Sarkar

Keyword(s):

Threshold Voltage ◽

Metal Alloy ◽

Gate Electrode ◽

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Metal gate electrode, channel and gate oxide engineering to improve DC and analog/RF performance of double-gate MOSFET for high-speed applications

Applied Physics A ◽

10.1007/s00339-020-03576-5 ◽

2020 ◽

Vol 126 (6) ◽

Author(s):

Sanjay ◽

B. Prasad ◽

Anil Vohra

Keyword(s):

Double Gate ◽

Gate Electrode ◽

Double Gate Mosfet ◽

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Analytical Model for Tapered Gate Electrode Double Gate MOSFET Incorporating Fringing Field Effects

Springer Proceedings in Physics - The Physics of Semiconductor Devices ◽

10.1007/978-3-319-97604-4_108 ◽

2019 ◽

pp. 697-705

Author(s):

Rakhi Narang ◽

Gokulnath Rajendran ◽

Mridula Gupta ◽

Manoj Saxena

Keyword(s):

Analytical Model ◽

Double Gate ◽

Gate Electrode ◽

Field Effects ◽

Double Gate Mosfet ◽

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Comprehensive quantum mechanical modeling of short channel SON MOSFET with spatial composition grading of binary metal alloy gate electrode

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.04.004 ◽

2015 ◽

Vol 83 ◽

pp. 676-689 ◽

Author(s):

Gargee Bhattacharyya ◽

Sharmistha Shee ◽

Subir Kumar Sarkar

Keyword(s):

Metal Alloy ◽

Quantum Mechanical ◽

Mechanical Modeling ◽

Gate Electrode ◽

Short Channel ◽

Binary Metal ◽

Spatial Composition

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