Analytical Determination of Generation-Recombination Rate In Amorphous Silicon
Keyword(s):
ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.
2001 ◽
Vol 13
(24)
◽
pp. 5663-5673
◽
2011 ◽
Vol 59
(2(3))
◽
pp. 1713-1716
◽
Keyword(s):
1999 ◽
Vol 79
(9)
◽
pp. 763-769
◽
Keyword(s):
Keyword(s):
Keyword(s):