CHARACTERIZATIONS OF GALLIUM AND ARSENIC CO-DOPED ZnO THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION TECHNIQUE

2007 ◽  
Vol 90 (1) ◽  
pp. 30-41
Author(s):  
F. K. SHAN ◽  
G. X. LIU ◽  
W. J. LEE ◽  
S. C. KIM ◽  
B. C. SHIN
2013 ◽  
Vol 115 (3) ◽  
pp. 843-849 ◽  
Author(s):  
Arun Aravind ◽  
K. Hasna ◽  
M. K. Jayaraj ◽  
Mukesh Kumar ◽  
Ramesh Chandra

2009 ◽  
Vol 44 (12) ◽  
pp. 1319-1322 ◽  
Author(s):  
J. Elanchezhiyan ◽  
B. C. Shin ◽  
W. J. Lee ◽  
S. H. Park ◽  
S. C. Kim

2008 ◽  
Vol 368-372 ◽  
pp. 322-325
Author(s):  
G.X. Liu ◽  
F.K. Shan ◽  
Byoung Chul Shin ◽  
Won Jae Lee

Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits. In this study, gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600°C) on sapphire (001) substrates by using PLD. X-ray diffractometer, atomic force microscope, spectrophotometer, and spectrometer were used to characterize the structural, the morphological and the optical properties of the thin films. Hall measurements were also carried out to identify the electrical properties of the thin films.


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