High frequency dielectric properties of thin-film PZT capacitors

1995 ◽  
Vol 10 (1-4) ◽  
pp. 335-342 ◽  
Author(s):  
W. Williamson Iii ◽  
B. K. Gilbert ◽  
H. D. Chen ◽  
K. R. Udayakumar ◽  
L. E. Cross ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
High Frequency

High frequency dielectric properties distribution of BiFeO3 thin film using near-field microwave microscopy

2009 ◽  
Vol 80 (11) ◽  
pp. 114701 ◽  
Author(s):  
Xiao-Yu Zhang ◽  
Xuan-Cong Wang ◽  
Feng Xu ◽  
Yun-Gui Ma ◽  
C. K. Ong
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
High Frequency ◽  
Near Field ◽  
Bifeo3 Thin Film ◽  
Microwave Microscopy

scholarly journals Sintering, Microstructure, and Dielectric Properties of Copper Borates for High Frequency LTCC Applications

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4017
Author(s):  
Dorota Szwagierczak ◽  
Beata Synkiewicz-Musialska ◽  
Jan Kulawik ◽  
Norbert Pałka
Keyword(s):  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
High Frequency ◽  
Ceramic Materials ◽  
Sintering Behavior ◽  
Terahertz Time Domain Spectroscopy ◽  
Very High Frequency ◽  
X Ray ◽  
Low Dielectric ◽  
Very High

New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. The sintering behavior, composition, microstructure, and dielectric properties of the ceramics were investigated using a heating microscope, X-ray diffractometry, scanning electron microscopy, energy dispersive spectroscopy, and terahertz time domain spectroscopy. The studies revealed a low dielectric permittivity of 5.1–6.7 and low dielectric loss in the frequency range 0.14–0.7 THz. The copper borate-based materials, owing to a low sintering temperature of 900–960 °C, are suitable for LTCC (low temperature cofired ceramics) applications.

Substrate-induced mechanical and dielectric properties of a ferroelectric thin film

2002 ◽  
Vol 91 (8) ◽  
pp. 4973-4982 ◽  
Author(s):  
L. Lahoche ◽  
V. Lorman ◽  
S. B. Rochal ◽  
J. M. Roelandt
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Ferroelectric Thin Film

scholarly journals Non-Uniform Bridge Connection of a High-Frequency Carrier-Type Thin-Film Magnetic Field Sensor

1999 ◽  
Vol 23 (4_2) ◽  
pp. 1621-1624 ◽  
Author(s):  
M. Takezawa ◽  
H. Ohdaira ◽  
M. Baba ◽  
M. Yamaguchi ◽  
K. I. Arai ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
High Frequency ◽  
Magnetic Field Sensor ◽  
Field Sensor

scholarly journals Measurement of high frequency conductivity of oxide-doped anti-ferromagnetic thin film with a near-field scanning microwave microscope

AIP Advances ◽  
2014 ◽  
Vol 4 (4) ◽  
pp. 047114 ◽  
Author(s):  
Z. Wu ◽  
A. D. Souza ◽  
B. Peng ◽  
W. Q. Sun ◽  
S. Y. Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Near Field ◽  
Microwave Microscope ◽  
Near Field Scanning

High Frequency Response of Magnetization of Thin-Film Heads

1992 ◽  
Vol 7 (10) ◽  
pp. 773-778
Author(s):  
S. Narumi ◽  
S. Sudo ◽  
M. Aihara ◽  
H. Fukui
Keyword(s):  
Thin Film ◽  
Frequency Response ◽  
High Frequency ◽  
High Frequency Response
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