Tem observation of ferroelectric films grown on silicon using Y2O3 buffer layer

Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43[Formula: see text]nm and its full width at half maximum (FWHM) of the AlN (0002) peak is [Formula: see text]. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46[Formula: see text]nm and its FWHM of the AlN (0002) peak is only [Formula: see text]. The piezoelectric coefficient d[Formula: see text] of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.

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Texture Studies on Borocarbide Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.495-497.1425 ◽

2005 ◽

Vol 495-497 ◽

pp. 1425-1430 ◽

Cited By ~ 1

Author(s):

K. Subba Rao ◽

R. Tamm ◽

S.C. Wimbush ◽

G.H. Cao ◽

C.G. Oertel ◽

...

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Pulsed Laser ◽

The Other ◽

Laser Deposition ◽

Epitaxial Thin Films ◽

Secondary Phases ◽

Superconducting Properties ◽

Phase Purity ◽

Y2o3 Buffer Layer

Epitaxial thin films of the superconducting borocarbide compound YNi2B2C were grown on single crystal MgO (100) substrates without and with Y2O3 buffer layer using pulsed laser deposition (PLD). In both cases YNi2B2C grows with [001] normal to the substrate. However, the in-plane texture depends on the starting condition. For samples without buffer layer, oxygen from the substrate diffuses into the film and forms an Y2O3 reaction layer at the interface. As a consequence, a deficiency of Y is generated giving rise to the formation of secondary phases. On the other hand, using an artificial Y2O3 buffer layer secondary phases are suppressed. The texture of the Y2O3 layers determines the texture of the YNi2B2C film. The superconducting properties of the borocarbide films are discussed with respect to texture and phase purity.

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Characteristics of SrBi 2 Ta 2 O 9 ferroelectric films on GaAs with a TiO 2 buffer layer

Applied Physics A ◽

10.1007/s003390201417 ◽

2003 ◽

Vol 76 (2) ◽

pp. 197-199 ◽

Cited By ~ 11

Author(s):

X.H. Liu ◽

Z.G. Liu ◽

Y.P. Wang ◽

T. Zhu ◽

J.M. Liu

Keyword(s):

Buffer Layer ◽

Ferroelectric Films

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Synthesis of Biaxially Aligned Y2O3 Buffer Layer Directly on Ni Tapes through the Electron Beam Deposition

Advances in Superconductivity X ◽

10.1007/978-4-431-66879-4_144 ◽

1998 ◽

pp. 615-618

Author(s):

Akihiro Kikuchi ◽

Kyoji Tachikawa ◽

Ataru Ichinose ◽

Shirabe Akita

Keyword(s):

Electron Beam ◽

Buffer Layer ◽

Electron Beam Deposition ◽

Y2o3 Buffer Layer ◽

Beam Deposition

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Enhancement of photoelectrochemical performance in ferroelectric films via the introduction of an Au buffer layer

Journal of Semiconductors ◽

10.1088/1674-4926/42/11/112701 ◽

2021 ◽

Vol 42 (11) ◽

pp. 112701

Author(s):

Dawei Cao ◽

Ming Li ◽

Jianfei Zhu ◽

Yanfang He ◽

Tong Chen ◽

...

Keyword(s):

Electric Field ◽

Buffer Layer ◽

Water Splitting ◽

Charge Separation ◽

Sol Gel ◽

Ferroelectric Films ◽

Photoelectrochemical Performance ◽

Band Bending ◽

Polarization Electric Field ◽

Pec Water Splitting

Abstract The inefficient separation of photogenerated carriers has become a serious problem that limits the photoelectrochemical (PEC) performance of semiconductors. Herein, a sol-gel method was used to prepare BiFeO3 ferroelectric thin films with FTO and FTO/Au as substrates, respectively. The polarization electric field of the ferroelectric can more effectively separate the carriers generated in the photoelectrode. Meanwhile, the introduction of an Au buffer layer can reduce the resistance in the process of charge transfer, accelerate the carrier migration, and enhance the efficiency of the charge separation. Under light irradiation, Au/BiFeO3 photoelectrode exhibited an extraordinary improvement in PEC water splitting compared with BiFeO3. In addition, the ferroelectric polarization electric field causes band bending, which further accelerates the separation of electrons and holes and improves the PEC performance of the photoelectrode. This work promotes the effective application of ferroelectric films in PEC water splitting.

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