Characteristics of SrBi 2 Ta 2 O 9 ferroelectric films on GaAs with a TiO 2 buffer layer

Abstract The inefficient separation of photogenerated carriers has become a serious problem that limits the photoelectrochemical (PEC) performance of semiconductors. Herein, a sol-gel method was used to prepare BiFeO3 ferroelectric thin films with FTO and FTO/Au as substrates, respectively. The polarization electric field of the ferroelectric can more effectively separate the carriers generated in the photoelectrode. Meanwhile, the introduction of an Au buffer layer can reduce the resistance in the process of charge transfer, accelerate the carrier migration, and enhance the efficiency of the charge separation. Under light irradiation, Au/BiFeO3 photoelectrode exhibited an extraordinary improvement in PEC water splitting compared with BiFeO3. In addition, the ferroelectric polarization electric field causes band bending, which further accelerates the separation of electrons and holes and improves the PEC performance of the photoelectrode. This work promotes the effective application of ferroelectric films in PEC water splitting.

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Lead Barium Zirconate Ferroelectric Films with ZrO[sub 2] Buffer Layer for Nonvolatile Memory Applications

Electrochemical and Solid-State Letters ◽

10.1149/1.2197967 ◽

2006 ◽

Vol 9 (7) ◽

pp. F57 ◽

Cited By ~ 2

Author(s):

Hung-Yao Chen ◽

Jen-Po Lin ◽

Jenn-Ming Wu ◽

Hsin-Erh Huang ◽

Hui-Yun Bor

Keyword(s):

Buffer Layer ◽

Nonvolatile Memory ◽

Barium Zirconate ◽

Ferroelectric Films ◽

Memory Applications

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Tem observation of ferroelectric films grown on silicon using Y2O3 buffer layer

Integrated Ferroelectrics ◽

10.1080/10584589908228458 ◽

1999 ◽

Vol 27 (1-4) ◽

pp. 81-91 ◽

Cited By ~ 2

Author(s):

Mohammad Mustafa Sarinanto ◽

Shogo Imada ◽

Shigeto Shoriki ◽

Byung-Eun Park ◽

Eisuke Tokumitsu ◽

...

Keyword(s):

Buffer Layer ◽

Ferroelectric Films ◽

Y2o3 Buffer Layer

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Epitaxial ferroelectric thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170591 ◽

1994 ◽

Vol 52 ◽

pp. 572-573

Author(s):

S. G. Ghonge ◽

E. Goo ◽

R. Ramesh ◽

R. Haakenaasen ◽

D. K. Fork

Keyword(s):

Single Crystal ◽

Work Function ◽

Nonvolatile Memory ◽

Ferroelectric Properties ◽

Electrical Contact ◽

Memory Devices ◽

Ferroelectric Films ◽

Si Substrates ◽

Electro Optic ◽

Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

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In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

Microscopy and Microanalysis ◽

10.1017/s1431927600032451 ◽

2001 ◽

Vol 7 (S2) ◽

pp. 1276-1277

Author(s):

Y. Akin ◽

R.E. Goddard ◽

W. Sigmund ◽

Y.S. Hascicek

Keyword(s):

Buffer Layer ◽

Lattice Mismatch ◽

Sol Gel ◽

Surface Oxidation ◽

Dip Coating ◽

Buffer Layers ◽

Superconducting Film ◽

Environmental Scanning ◽

Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

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