scholarly journals Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films

2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal
Keyword(s):  
Hall Mobility ◽  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Life Time ◽  
Mean Free Path ◽  
Charge Carriers ◽  
Evaporation Technique ◽  
Carrier Life Time ◽  
Type Conduction

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

scholarly journals The influence of CdCl2 layer and annealing process on the structural and electrical properties of CdTe films

2019 ◽  
Vol 11 (22) ◽  
pp. 8-13
Author(s):  
Mohammed A. Razooqi
Keyword(s):  
Room Temperature ◽  
Life Time ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Cdte Films ◽  
P Type ◽  
Carrier Life Time

A polycrystalline CdTefilms have been prepared by thermal evaporation technique on glass substrate at room temperature. The films thickness was about700±50 nm. Some of these films were annealed at 573 K for different duration times (60, 120 and 180 minutes), and other CdTe films followed by a layer of CdCl2 which has been deposited on them, and then the prepared CdTe films with CdCl2 layer have been annealed for the same conditions. The structures of CdTe films without and with CdCl2 layer have been investigated by X-ray diffraction. The as prepared and annealed films without and with CdCl2 layer were polycrystalline structure with preferred orientation at (111) plane. The better structural properties have been observed in presence of CdCl2 layer. The D.C conductivity for CdTe films with CdCl2 layershowed higher values. The electrical activation energy influenced with increasing duration times of annealing. Hall Effect measurement was indicated that all CdTe films are p-type. The carrier concentration, Hall mobility and the carrier life time wereaffected by increasing duration times of annealing.

IMPACTS OF ANNEAL TEMPERATURE ON THE STRUCTURAL, MAGNETIC AND OPTICAL PROPERTIES OF THE Fe:LaSrFeO4 COMPOSITE FILM

2016 ◽  
Vol 23 (06) ◽  
pp. 1650060
Author(s):  
J. SHI ◽  
Y. L. JIA ◽  
X. H. LI ◽  
X. H. DAI ◽  
J. X. GUO ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Composite Films ◽  
Annealed Sample ◽  
Absorption Properties ◽  
Oxygen Loss ◽  
Quartz Substrates ◽  
Anneal Temperature ◽  
Intrinsic Strain

We prepared the pulsed laser deposited Fe:LaSrFeO4 (LSFO) composite films on quartz substrates by decomposing the La[Formula: see text]Sr[Formula: see text]FeO3 target at room temperature in a high vacuum. Impacts of anneal temperature on the structural and physical properties have been investigated, and the systematic changes were found in structural, magnetic and optical absorption properties upon annealing. The LSFO (110) spacing decreases with the increase of annealing temperature, which can be attributed to the release of intrinsic strain; and there is an increase in spacing for the 750[Formula: see text]C annealed sample, which is ascribed to the oxygen loss in LSFO films.

scholarly journals Morphology and electrical properties of Cu X Zn1-XO thin films prepared by PLD technique

2019 ◽  
Vol 14 (29) ◽  
pp. 8-14
Author(s):  
Eman Mizher Nasir
Keyword(s):  
Thin Films ◽  
Life Time ◽  
Charge Carriers ◽  
Laser Deposition ◽  
Content Increase ◽  
Average Roughness ◽  
Annealing Temperatures ◽  
Average Grain Size ◽  
P Type ◽  
Carrier Life Time

Cu X Zn1-XO films with different x content have been prepared bypulse laser deposition technique at room temperatures (RT) anddifferent annealing temperatures (373 and 473) K. The effect of xcontent of Cu (0, 0.2, 0.4, 0.6, 0.8) wt.% on morphology andelectrical properties of CuXZn1-XO thin films have been studied.AFM measurements showed that the average grain size values forCuXZn1-xO thin films at RT and different annealing temperatures(373, 473) K decreases, while the average Roughness values increasewith increasing x content. The D.C conductivity for all filmsincreases as the x content increase and decreases with increasing theannealing temperatures. Hall measurements showed that there aretwo types of conductance (n- type and p-type charge carriers). Alsothe variation of drift velocity (vd), carrier life time (), and free meanpath (l) with different x content and annealing temperatures weremeasured.

scholarly journals Isochronal Studies of the Structural and Electrical Properties of CdTe Films

2011 ◽  
Vol 8 (1) ◽  
pp. 134-140
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
P Type

The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.

scholarly journals Organic semiconductors with a charge carrier life time of over 2 hours at room temperature

2015 ◽  
Vol 3 (47) ◽  
pp. 12260-12266 ◽  
Author(s):  
Yang Liu ◽  
Roderick. C. I. MacKenzie ◽  
Bin Xu ◽  
Yajun Gao ◽  
Miquel Gimeno-Fabra ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Organic Semiconductors ◽  
Room Temperature ◽  
Life Time ◽  
Materials Used ◽  
A Charge ◽  
Carrier Life Time

By tuning both the materials used in the device, and it's structure we are able to observe a charge carrier life time of over 2 hours and still extract significant amounts of charge after 5 hours.

ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A-Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) THIN FILMS

2013 ◽  
Vol 22 ◽  
pp. 439-451
Author(s):  
AMBIKA SHARMA ◽  
KUMARI ANSHU ◽  
PREETI YADAV
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Life Time ◽  
Defect States ◽  
Temperature Dependent ◽  
Photoelectrical Properties ◽  
Glassy Alloys ◽  
Localized State ◽  
Evaporation Technique ◽  
Density Of Defect States

Bulk samples of Te-rich Ge20Te80-xBix (x = 0, 1.5, 2.5, 5.0) glassy alloys are prepared by melt quenching technique. The thin films of the bulk samples are deposited by using vacuum evaporation technique for their electrical and photoelectrical measurements. Keithley 6487 picoammeter has been used to study the electrical and photoelectrical characteristics of Ge20Te80-XBix thin films kept in vacuum. Temperature dependent dark and photoconductivity is studied in the temperature range 300-360 K and voltage V = 80V. Photoconductivity with intensity at room temperature follows a power law where power γ lies near to 0.5, suggesting that the recombination is bimolecular in nature. The density of defect states and photosensitivity are found to follow an opposite trend with each other. The differential life time is determined from the rise and decay of photocurrent w.r.t. time. The dispersion parameter and localized state distribution parameter are estimated from decay curves and reported for the studied composition.

Effect of X-Ray Irradiation on the Current of P-N Diode

2011 ◽  
Vol 695 ◽  
pp. 561-564 ◽  
Author(s):  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Poopol Rujanapich ◽  
Amporn Poyai ◽  
Surasak Niemcharoen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Life Time ◽  
Electrical Characteristics ◽  
X Ray ◽  
Boron Doped ◽  
Characteristic Variation ◽  
Current Voltage ◽  
Before And After ◽  
Order Of Magnitude ◽  
Carrier Life Time

An effect induced by x-ray irradiation on Boron-doped crystalline Si at room temperature was closely investigated in this paper. Irradiation of X-ray energy of 40, 55 and 70keV has been performed on P-N junction diodes fabricated at Thai Microelectronics Center. Minority carrier life time of the device has been calculated before and after irradiation for comparison. The results show no significant change on the value between exposed and unexposed device. Therefore, any permanent lattice modified or any defects caused by X-ray in the device bulk seem to be unconfirmed in this range of energy. However, from this study, X-ray irradiation still effects on electrical characteristics of the diodes. Current-voltage (I-V) measurement has been carried out to study characteristic variation of the device. Biasing of the device was performed from -10 to 1 V and, after the exposure, the leakage current was obviously decreased by 25% and forward current was dramatically increased by 3 order of magnitude related to increment of X-ray energy.

scholarly journals Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells

2021 ◽  
Author(s):  
Mayyada Muttar Fdhala ◽  
◽  
Ayser A. Hemed ◽  
Ramiz A. Al-Ansari ◽  
Raad M. Al-Haddad ◽  
...  
Keyword(s):  
Power Density ◽  
Schottky Diode ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Good Efficiency ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Evaporation Technique

Schottky Diode (SD) Al/a-Se/Au as a solar cell (SC) was prepared by thermal evaporation technique (TET) on glass thin slide as a substrate under vacuum (10!" mbar). The Schottky Barrier (SB) have been prepared with different thicknesses (300, 500 and 700) nm in room temperature and (343) K annealing temperature. The current-voltage (IV) physical properties of the SB have got rectification properties and approved as a SC. This cell is developed with increased annealing temperatures and thickness of layers of SD. Experience under lighting shows good efficiency (η), which increased linearly with both thickness and annealing temperatures from (0.0318% to 4.064%) and from (0.0318% to 0.4778%). This is for three values of lighting power density (160, 230, 400) 𝑚𝑊/𝑐𝑚# in which the behave is similar. The best efficiency obtained in this work was (15.286)% at a power density of 400 𝑚𝑊/𝑐𝑚# , with thickness 700nm and 343K annealing temperature. Also (12.407)% at 230 𝑚𝑊/𝑐𝑚#, with thickness 500nm for the same annealing temperature.

scholarly journals Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS

2018 ◽  
Vol 15 (2) ◽  
pp. 192-197
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Solar Cell ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Annealing Temperatures ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
Vacuum Evaporation Technique

Thin films of CdTe were prepared with thickness (500, 1000) nm on the glass substrate by vacuum evaporation technique at room temperature then treated different annealing temperatures (373,473,and 573)K for one hour. Results of the Hall Effect and the electrical conductivity of (I-V) characteristics were measured in darkness and light.at different annealing temperature results show that the thin films have ability to manufacture solar cells, and found that the efficient equal to (2.18%) for structure solar cell (Algrid / CdS / CdTe /glass/ Al) and the efficient equal to (1.12%) for structure solar cell (Algrid / CdS / CdTe /Si/ Al) with thick ness of (1000) nm with CdTe thin films at RT.

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