A many-frequency oscillator model for non-radiative processes in condensed media I. Dynamics of non-radiative transitions

Radiative and non-radiative transitions present alternative ways for the excited atom to reduce its energy when the initial state is an atom singly ionised in one of its inner electron shells. Since the fluorescence yield gives the probability that the empty state in the inner (sub)shell is filled in by a radiative process, it seems that the generated x-ray intensities are independent of the non-radiative rearrangements from the point on where the value of fluorescence yield is given for the (sub)shell in question. In that way the intensity of an x-ray line would solely be dependent on the ionisation probability of the given (sub)shell and on the rates of the radiative transitions (determining the relative intensities of the lines originating from the same subshell). That image involves that the non-radiative processes only influence the value of the fluorescence yield. For the simplest case i.e. for the K shell it is true.

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Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

Applied Sciences ◽

10.3390/app11020497 ◽

2021 ◽

Vol 11 (2) ◽

pp. 497

Author(s):

Vladimir A. Burdov ◽

Mikhail I. Vasilevskiy

Keyword(s):

Light Emission ◽

Semiconductor Nanocrystals ◽

Electronic Systems ◽

Auger Process ◽

Radiative Processes ◽

Radiative Transitions ◽

Environment Effects ◽

Emission Decay ◽

Photon Interactions ◽

Physical Phenomena

In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

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Recent Radiative and Collisional Atomic Data of Astrophysical Interest

International Astronomical Union Colloquium ◽

10.1017/s0252921100107596 ◽

1988 ◽

Vol 102 ◽

pp. 129-132

Author(s):

K.L. Baluja ◽

K. Butler ◽

J. Le Bourlot ◽

C.J. Zeippen

Keyword(s):

Mass Production ◽

Bound States ◽

Physical Models ◽

Impact Excitation ◽

Electron Impact Excitation ◽

Atomic Data ◽

Isoelectronic Sequence ◽

Astrophysical Interest ◽

Radiative Transitions ◽

Forbidden Transitions

SummaryUsing sophisticated computer programs and elaborate physical models, accurate radiative and collisional atomic data of astrophysical interest have been or are being calculated. The cases treated include radiative transitions between bound states in the 2p4and 2s2p5configurations of many ions in the oxygen isoelectronic sequence, the photoionisation of the ground state of neutral iron, the electron impact excitation of the fine-structure forbidden transitions within the 3p3ground configuration of CℓIII, Ar IV and K V, and the mass-production of radiative data for ions in the oxygen and fluorine isoelectronic sequences, as part of the international Opacity Project.

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