Tunable work function in Junctionless Tunnel FETs for performance enhancement

Author(s):  
Roop Narayan Goswami ◽  
S Poorvasha ◽  
B Lakshmi
2016 ◽  
Vol 52 (9) ◽  
pp. 770-772 ◽  
Author(s):  
B. Raad ◽  
K. Nigam ◽  
D. Sharma ◽  
P. Kondekar

2020 ◽  
Author(s):  
Yunhe Guan ◽  
Hamilton Carrillo-Nuñez ◽  
Vihar Giorgiev ◽  
Asen Asenov ◽  
Feng Liang ◽  
...  

2021 ◽  
Author(s):  
Rahul Gupta ◽  
Mamta Khosla ◽  
Girish Wadhwa

In this investigated work, we have analysed the miscellaneous figure of merit for Double metal Triple gate TFET. Various techniques have been utilized to improve the ON-state driven current in the drain by doing a comprehensive analysis. Different techniques are examined and correlated by using the TCAD Silvaco tool to get excellent ON current. Further work function engineering has been done in the optimized DMTG-TFET to increase its performance and finally, we introduce pocket doping that increases the ON current (2.34×10-3) and also ION/IOFF ratio (4.36×1014) with subthreshold (SS) of 25.8mV/decade. The pocket doped DMTG-TFET adequately suppress the ambipolarity and endeavour about 20 times higher ION as compared to conventional DMTG-TFET.


2015 ◽  
Vol 22 ◽  
pp. 173-179 ◽  
Author(s):  
Hongwei Lei ◽  
Pingli Qin ◽  
Weijun Ke ◽  
Yaxiong Guo ◽  
Xin Dai ◽  
...  

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