scholarly journals Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependence

2019 ◽  
Vol 20 (1) ◽  
pp. 313-323 ◽  
Author(s):  
Thomas Paul Weiss ◽  
Romain Carron ◽  
Max H. Wolter ◽  
Johannes Löckinger ◽  
Enrico Avancini ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Surface Recombination ◽  
Front Surface ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Temperature dependence of time-resolved photoluminescence of bound excitons in CuInS2 crystals

2005 ◽  
Vol 480-481 ◽  
pp. 283-285 ◽  
Author(s):  
K. Wakita ◽  
K. Nishi ◽  
Y. Ohta ◽  
T. Onishi
Keyword(s):  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

2009 ◽  
Vol 94 (18) ◽  
pp. 183101 ◽  
Author(s):  
C. H. Lin ◽  
H. S. Lin ◽  
C. C. Huang ◽  
S. K. Su ◽  
S. D. Lin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Spectroscopy ◽  
Quantum Ring ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Space and Time Resolved Photoluminescence of Defects at Dislocations in In-Alloyed GaAs Substrate Material

1987 ◽  
Vol 104 ◽  
Author(s):  
Matthew B. Johnson ◽  
A. T. Hunter ◽  
T. C. McGill
Keyword(s):  
Gaas Substrate ◽  
Surface Recombination ◽  
Substrate Material ◽  
Outer Radius ◽  
Time Resolved ◽  
Space And Time ◽  
Dislocation Cluster ◽  
Pl Intensity ◽  
Time Resolved Photoluminescence ◽  
Intensity Contrast

ABSTRACTWe report a study of dislocations in In-alloyed GaAs substrate material using space and time resolved photoluminescence (PL). PL intensity maps show that an isolated dislocation cluster is in the center of a dark region with a 50μm radius surrounded by a bright region with an outer radius of 150μm. Lifetime measurements were made in the bright and dark regions. Values as long as 3.5 ns and as short as 250 psec were observed in adjacent bright and dark regions. These measurements indicate that the PL intensity contrast is explained by lifetime variations in these features. This supports the view that the dislocation cluster acts as a source and sink for defects which govern the lifetime in the surrounding material. Temperature dependence of the lifetime indicates two different defects may be involved. Both of these produce deep levels, neither one of which is EL2. A surface passivation technique is used to show that surface recombination is not important to the PL intensity contrast.

Temperature dependence of steady and time-resolved photoluminescence in Si quantum dots/SiO2 superlattices

2014 ◽  
Vol 434 ◽  
pp. 177-180 ◽  
Author(s):  
Wei Yu ◽  
Huina Feng ◽  
Jin Wang ◽  
Wanlei Dai ◽  
Xiang Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Si Quantum Dots

scholarly journals Temperature Dependence of Time Resolved Photoluminescence at 512 μm and at 528 μm and Magnetic Properties of Uranium Glass

2009 ◽  
Vol 56 (9) ◽  
pp. 578-581
Author(s):  
Shoichi Nasu ◽  
Hidehito Nanto ◽  
Akio Nakamura ◽  
Etsuji Yamamoto ◽  
Toshihiko Ohmichi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Temperature dependence of time-resolved photoluminescence in closely packed alignment of Si nanodisks with SiC barriers

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Takayuki Kiba ◽  
Yoshiya Mizushima ◽  
Makoto Igarashi ◽  
Chi-Hsien Huang ◽  
Seiji Samukawa ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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