Temperature dependence of time-resolved photoluminescence of bound excitons in CuInS2 crystals

2005 ◽  
Vol 480-481 ◽  
pp. 283-285 ◽  
Author(s):  
K. Wakita ◽  
K. Nishi ◽  
Y. Ohta ◽  
T. Onishi
Keyword(s):  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Time-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependence

2019 ◽  
Vol 20 (1) ◽  
pp. 313-323 ◽  
Author(s):  
Thomas Paul Weiss ◽  
Romain Carron ◽  
Max H. Wolter ◽  
Johannes Löckinger ◽  
Enrico Avancini ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Surface Recombination ◽  
Front Surface ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

2009 ◽  
Vol 94 (18) ◽  
pp. 183101 ◽  
Author(s):  
C. H. Lin ◽  
H. S. Lin ◽  
C. C. Huang ◽  
S. K. Su ◽  
S. D. Lin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Photoluminescence Spectroscopy ◽  
Quantum Ring ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Temperature dependence of steady and time-resolved photoluminescence in Si quantum dots/SiO2 superlattices

2014 ◽  
Vol 434 ◽  
pp. 177-180 ◽  
Author(s):  
Wei Yu ◽  
Huina Feng ◽  
Jin Wang ◽  
Wanlei Dai ◽  
Xiang Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Si Quantum Dots

scholarly journals Temperature Dependence of Time Resolved Photoluminescence at 512 μm and at 528 μm and Magnetic Properties of Uranium Glass

2009 ◽  
Vol 56 (9) ◽  
pp. 578-581
Author(s):  
Shoichi Nasu ◽  
Hidehito Nanto ◽  
Akio Nakamura ◽  
Etsuji Yamamoto ◽  
Toshihiko Ohmichi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Temperature dependence of time-resolved photoluminescence in closely packed alignment of Si nanodisks with SiC barriers

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Takayuki Kiba ◽  
Yoshiya Mizushima ◽  
Makoto Igarashi ◽  
Chi-Hsien Huang ◽  
Seiji Samukawa ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

2005 ◽  
Vol 892 ◽  
Author(s):  
Andrei Osinsky ◽  
Jianwei Dong ◽  
J. Q. Xie ◽  
B. Hertog ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Compositional Analysis ◽  
Optical Emission ◽  
Rf Plasma ◽  
Light Emitters ◽  
Time Resolved ◽  
Light Emitting ◽  
Spatially Resolved ◽  
Time Resolved Photoluminescence ◽  
Made In

AbstractThis paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film.

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