The creep of quartz single crystals, with special reference to the mechanism by which water accommodates dislocation glide

1977 ◽  
Vol 36 (3) ◽  
pp. 713-723 ◽  
Author(s):  
A. Ayensu ◽  
K. H. G. Ashbee
Keyword(s):  
Special Reference ◽  
Single Crystals ◽  
Dislocation Glide

Dislocation glide systems in diopside single crystals deformed at 800-900ºC

1992 ◽  
Vol 4 (6) ◽  
pp. 1291-1302 ◽  
Author(s):  
Jannick Ingrin ◽  
Nicole Doukhan ◽  
Jean-Claude Doukhan
Keyword(s):  
Single Crystals ◽  
Dislocation Glide

scholarly journals Dislocation glide-controlled room-temperature plasticity in 6H-SiC single crystals

2014 ◽  
Vol 80 ◽  
pp. 400-406 ◽  
Author(s):  
S. Kiani ◽  
K.W.K. Leung ◽  
V. Radmilovic ◽  
A.M. Minor ◽  
J.-M. Yang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Dislocation Glide

The Strain Rate Sensitivity of Ni3(Al,Ta) Single Crystals.

1990 ◽  
Vol 213 ◽  
Author(s):  
J. Bonneville ◽  
J.L. Martin
Keyword(s):  
Stress Relaxation ◽  
Strain Rate ◽  
Single Crystals ◽  
Strain Rate Sensitivity ◽  
Rate Sensitivity ◽  
Complete Information ◽  
Dislocation Glide ◽  
Plastic Deformation Process ◽  
Nonmonotonic Variation ◽  
Almost All

ABSTRACTIn order to obtain more complete information about the strain rate sensitivity of the flow stress of L12 alloys, Ni3Al,Ta) single crystals have been deformed in compression, over a range of temperatures (293–1273K), at two different strain rates and in stress relaxation experiments.During the stress relaxation tests, at almost all the temperatures (except T~470K), a logarithmic decrease of the stress as a function of time has been observed. This is in fair agreement with the classical frame work of the thermal activation theory of dislocation glide. Thus, the corresponding apparent activation volumes have been determined and the nonmonotonic variation of this activation parameter with the temperature indicates that it is necessary to consider more than one plastic deformation process. These new results are discussed in terms of the previously published models which account for the plastic behaviours of the L12 compounds.

The Effect of Oxygen on the Brittle-to-Ductile Transition in Silicon Single Crystals

2010 ◽  
Vol 654-656 ◽  
pp. 1299-1302
Author(s):  
Youn Jeong Hong ◽  
Masaki Tanaka ◽  
Kenji Higashida
Keyword(s):  
Single Crystals ◽  
Silicon Crystal ◽  
Dislocation Mobility ◽  
Dislocation Glide ◽  
Three Point Bending ◽  
Brittle To Ductile Transition ◽  
Silicon Crystals ◽  
Apparent Fracture Toughness ◽  
The Difference ◽  
Effect Of Oxygen

The brittle-to-ductile transition (BDT) in Czochralski (CZ) grown silicon single crystals and floating-zone (FZ) grown silicon single crystals was investigated by three-point bending. The temperature dependence of the apparent fracture toughness was measured in three different cross-head speeds. It was found that the BDT temperature in the CZ silicon crystal was higher than that in FZ silicon crystal, suggesting that the solute oxygen decreases dislocation mobility. However, the activation energies obtained from the strain rate dependence of the BDT temperatures were nearly the same in both the CZ and FZ silicon crystals, indicating that the dislocation mobility is not influenced by the solute oxygen. In this paper, the origin of the difference in the BDT temperature is discussed, focusing the role of the solute oxygen on the dislocation glide.

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