Photodetachment of an electron from a negative ion in the near-threshold region. II. Pulses of radiation with smooth time envelopes

Journal of Physics B Atomic and Molecular Physics ◽

10.1088/0022-3700/16/19/022 ◽

1983 ◽

Vol 16 (19) ◽

pp. 3653-3666 ◽

Author(s):

M V Fedorov ◽

A V Kazakov

Keyword(s):

Negative Ion ◽

Threshold Region ◽

Region Ii ◽

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Photodetachment of an electron from a negative ion in the near-threshold region. I. Suddenly switching-on interaction

Journal of Physics B Atomic and Molecular Physics ◽

10.1088/0022-3700/16/19/021 ◽

1983 ◽

Vol 16 (19) ◽

pp. 3641-3652 ◽

Author(s):

M V Fedorov ◽

A E Kazakov

Keyword(s):

Negative Ion ◽

Threshold Region ◽

Region I ◽

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Excitation of the C3Piustate of N2by electron impact in the near-threshold region

Journal of Physics B Atomic Molecular and Optical Physics ◽

10.1088/0953-4075/27/3/021 ◽

1994 ◽

Vol 27 (3) ◽

pp. 573-581 ◽

Author(s):

M Zubek

Keyword(s):

Electron Impact ◽

Threshold Region ◽

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Relaxation effects in C1s photoionisation of CO: a high resolution photoelectron study in the near-threshold region

Journal of Electron Spectroscopy and Related Phenomena ◽

10.1016/0368-2048(95)02391-7 ◽

1995 ◽

Vol 75 ◽

pp. 97-108 ◽

Author(s):

H.M. Köppe ◽

A.L.D. Kilcoyne ◽

J. Feldhaus ◽

A.M. Bradshaw

Keyword(s):

High Resolution ◽

Threshold Region ◽

Relaxation Effects ◽

Photoelectron Study ◽

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Three-body analysis of incoherent η-photoproduction on the deuteron in the near threshold region

Physics Letters B ◽

10.1016/s0370-2693(00)01062-5 ◽

2000 ◽

Vol 492 (1-2) ◽

pp. 32-38 ◽

Author(s):

A. Fix ◽

H. Arenhövel

Keyword(s):

Threshold Region ◽

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The cross section for electron impact excitation of the E 3Σg+ state of N2 in the near-threshold region

Chemical Physics Letters ◽

10.1016/0009-2614(88)87487-6 ◽

1988 ◽

Vol 146 (6) ◽

pp. 496-500 ◽

Author(s):

Mariusz Zubek

Keyword(s):

Electron Impact ◽

Cross Section ◽

Impact Excitation ◽

Electron Impact Excitation ◽

Threshold Region ◽

The Cross ◽

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Energy and Delay Tradeoffs of Soft-Error Masking for 16-nm FinFET Logic Paths: Survey and Impact of Process Variation in the Near-Threshold Region

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2016.2587763 ◽

2017 ◽

Vol 64 (6) ◽

pp. 695-699 ◽

Author(s):

Faris S. Alghareb ◽

Rizwan A. Ashraf ◽

Ahmad Alzahrani ◽

Ronald F. DeMara

Keyword(s):

Process Variation ◽

Threshold Region ◽

Error Masking ◽

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The influence of a duplex microstructure in steels on fatigue crack growth in the near-threshold region

Metallurgical Transactions A ◽

10.1007/bf02643352 ◽

1982 ◽

Vol 13 (3) ◽

pp. 439-445 ◽

Author(s):

K. Minakawa ◽

Y. Matsuo ◽

A. J. McEVILY

Keyword(s):

Fatigue Crack ◽

Fatigue Crack Growth ◽

Crack Growth ◽

Threshold Region ◽

Duplex Microstructure ◽

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A Variation Aware Register Clustering Methodology in Near-Threshold Region

2019 IEEE 13th International Conference on ASIC (ASICON) ◽

10.1109/asicon47005.2019.8983494 ◽

2019 ◽

Author(s):

Xiangnan Song ◽

Shiying Zhang ◽

Ju Zhou ◽

Xuexiang Wang

Keyword(s):

Threshold Region ◽

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Energy Efficient and Process Tolerant Full Adder Design in Near Threshold Region Using FinFET

2010 International Symposium on Electronic System Design ◽

10.1109/ised.2010.19 ◽

2010 ◽

Author(s):

A Islam ◽

M W Akram ◽

A Imran ◽

M Hasan

Keyword(s):

Energy Efficient ◽

Threshold Region ◽

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Study of the excitation of high-spin isomers in 190Ir and 196,198Au in the near-threshold region

Bulletin of the Russian Academy of Sciences Physics ◽

10.3103/s1062873808110324 ◽

2008 ◽

Vol 72 (11) ◽

pp. 1577-1580

Author(s):

I. N. Vishnevsky ◽

V. O. Zheltonozhsky ◽

E. V. Kulich ◽

A. N. Savrasov ◽

N. V. Strilchuk

Keyword(s):

High Spin ◽

Threshold Region ◽

Spin Isomers ◽

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