Local-pseudopotential calculation for optical properties and photoemission valence-band spectrum of silicon

1983 ◽  
Vol 16 (35) ◽  
pp. 6731-6738 ◽  
Author(s):  
D R Masovic ◽  
F R Vukajlovic ◽  
S Zekovic
2018 ◽  
Vol 52 (11) ◽  
pp. 1403-1406 ◽  
Author(s):  
S. V. Gudina ◽  
A. S. Bogolyubskii ◽  
V. N. Neverov ◽  
N. G. Shelushinina ◽  
M. V. Yakunin

2009 ◽  
Vol 79 (10) ◽  
Author(s):  
K. Miyamoto ◽  
A. Kimura ◽  
Y. Miura ◽  
M. Shirai ◽  
M. Ye ◽  
...  

1980 ◽  
Vol 33 (8) ◽  
pp. 895-897 ◽  
Author(s):  
M. Matsuura ◽  
T. Nomoto ◽  
F. Itoh ◽  
K. Suzuki

Author(s):  
A. Kowalczyk ◽  
A. Szajek ◽  
L. Smardz ◽  
J. Baszy?ski

1973 ◽  
Vol 12 (5) ◽  
pp. 752-753
Author(s):  
Yoshifumi Tada ◽  
Manabu Funahashi ◽  
Kogoro Maeda

1975 ◽  
Vol 50 (6) ◽  
pp. 449-450 ◽  
Author(s):  
H. Ebel ◽  
N. Gurker

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.


2002 ◽  
Vol 09 (01) ◽  
pp. 469-472
Author(s):  
V. N. KOLOBANOV ◽  
I. A. KAMENSKIKH ◽  
V. V. MIKHAILIN ◽  
I. N. SHPINKOV ◽  
D. A. SPASSKY ◽  
...  

The optical properties of a wide series of the tungstates with the scheelite and wolframite crystal structure at the threshold of the fundamental absorption region were studied. New information about the influence of the electronic states forming the bottom of the conduction band and the top of the valence band on the formation of emission centers and mechanisms of energy transfer to these centers was obtained.


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