“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.

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Conduction band-valence band coupling effects on the band structure of In0.28Ga0.72N/GaN Quantum Well

2013 Spanish Conference on Electron Devices ◽

10.1109/cde.2013.6481380 ◽

2013 ◽

Cited By ~ 1

Author(s):

Saumya Biswas ◽

Ifana Mahbub ◽

Md. Shofiqul Islam

Keyword(s):

Band Structure ◽

Quantum Well ◽

Valence Band ◽

Conduction Band ◽

Coupling Effects

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The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser

MRS Proceedings ◽

10.1557/proc-484-413 ◽

1997 ◽

Vol 484 ◽

Author(s):

K. S. Chan ◽

Michael C. Y. Chan

Keyword(s):

Band Structure ◽

Quantum Well ◽

Valence Band ◽

Tensile Strain ◽

Optical Gain ◽

Valence Band Structure ◽

Quantum Well Laser ◽

Tensile Strains

AbstractIn this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60Å. Different P concentrations in the as-grown well are chosen to obtain different tensile strains in the QW. Interdiffusion induces changes in the tensile strains and confinement potentials, which consequently change the valence band structure and the optical gain.

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Band Structure Analysis of La0.7Sr0.3MnO3Perovskite Manganite Using a Synchrotron

Advances in Condensed Matter Physics ◽

10.1155/2015/746475 ◽

2015 ◽

Vol 2015 ◽

pp. 1-7 ◽

Cited By ~ 5

Author(s):

Hong-Sub Lee ◽

Hyung-Ho Park

Keyword(s):

Band Structure ◽

Valence Band ◽

Structure Analysis ◽

Oxide Semiconductor ◽

Band Spectrum ◽

Perovskite Manganite ◽

Core Electron ◽

Oxide Semiconductors ◽

Analysis Technique ◽

Band Conduction

Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study aLa0.7Sr0.3MnO3(LSMO) oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

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