Hot-carrier energy distribution model and its application to the MOSFET substrate current

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

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Monte Carlo Simulation of Recrystallization with a New Mesoscopic Stored Energy Distribution Model

2009 Second International Conference on Intelligent Computation Technology and Automation ◽

10.1109/icicta.2009.265 ◽

2009 ◽

Cited By ~ 1

Author(s):

Lijun Wang ◽

Xiaojun Guan ◽

Baojun Yu ◽

Xiaomin Shen ◽

Qingkai Zeng ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Energy Distribution ◽

Distribution Model ◽

Stored Energy

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Determining plasmonic hot-carrier energy distributions via single-molecule transport measurements

Science ◽

10.1126/science.abb3457 ◽

2020 ◽

pp. eabb3457 ◽

Cited By ~ 6

Author(s):

Harsha Reddy ◽

Kun Wang ◽

Zhaxylyk Kudyshev ◽

Linxiao Zhu ◽

Shen Yan ◽

...

Keyword(s):

Single Molecule ◽

Plasmonic Nanostructures ◽

Hot Carriers ◽

Energy Distributions ◽

Nanoscale Systems ◽

Hot Carrier ◽

Transport Measurements ◽

Single Molecule Junctions ◽

Molecule Transport ◽

Carrier Energy

Hot-carriers in plasmonic nanostructures, generated via plasmon decay, play key roles in applications like photocatalysis and in photodetectors that circumvent band-gap limitations. However, direct experimental quantification of steady-state energy distributions of hot-carriers in nanostructures has so far been lacking. We present transport measurements from single-molecule junctions, created by trapping suitably chosen single molecules between an ultra-thin gold film supporting surface plasmon polaritons and a scanning probe tip, that can provide quantification of plasmonic hot-carrier distributions. Our results show that Landau damping is the dominant physical mechanism of hot-carrier generation in nanoscale systems with strong confinement. The technique developed in this work will enable quantification of plasmonic hot-carrier distributions in nanophotonic and plasmonic devices.

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