Phonon-induced shift of spectral lines: I. General theory

1972 ◽  
Vol 5 (2) ◽  
pp. 121-133 ◽  
Author(s):  
G E Stedman
Keyword(s):  
General Theory ◽  
Spectral Lines

PHONON BROADENING OF IMPURITY SPECTRAL LINES: II. APPLICATION TO SILICON

1963 ◽  
Vol 41 (11) ◽  
pp. 1823-1835 ◽  
Author(s):  
Robert Barrie ◽  
Kyoji Nishikawa
Keyword(s):  
General Theory ◽  
Spectral Lines ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Potential Description ◽  
Electron Phonon Interaction ◽  
Shallow Impurity ◽  
Hydrogenic Model ◽  
Numerical Estimations

The general theory of the phonon broadening of impurity spectral lines discussed in an earlier paper is applied to shallow impurity levels in silicon. With the use of a modified hydrogenic model and a deformation potential description of the electron–phonon interaction, expressions are obtained for typical contributions to the half-widths. Some numerical estimations are made for both acceptor and donor cases and are compared with experiment.

General Theory of Pressure Broadening of Spectral Lines

1945 ◽  
Vol 68 (3-4) ◽  
pp. 78-93 ◽  
Author(s):  
Alexander Jabloński
Keyword(s):  
General Theory ◽  
Spectral Lines ◽  
Pressure Broadening

scholarly journals THEODORO AUGUSTO RAMOS - A BRAZILIAN CONTRIBUTION TO THE MODEL OF THE ATOM

2005 ◽  
Vol 13 (13) ◽  
pp. 1-12
Author(s):  
Lavinel G. IONESCU ◽  
Luis Alcides Brandini De Boni
Keyword(s):  
Hydrogen Atom ◽  
General Theory ◽  
Present Article ◽  
Spectral Lines ◽  
Theory Of Relativity ◽  
General Theory Of Relativity ◽  
Academy Of Sciences

The present article discusses the contribution of Theodoro Augusto Ramos, A Brazilian mathematician, to the model of the atom. In a paper entitled "The Theory of Relativity and the Spectral Lines of Hydrogen", presented to the Brazilian Academy of Sciences in November 1923, Theodoro Ramos analyzed the fine spectra of the hydrogen atom using the principles of the general theory of relativity. His results represent an improvement of the Bohr-Sommerfeld model.

PHONON BROADENING OF IMPURITY SPECTRAL LINES: I. GENERAL THEORY

1963 ◽  
Vol 41 (7) ◽  
pp. 1135-1173 ◽  
Author(s):  
Kyoji Nishikawa ◽  
Robert Barrie
Keyword(s):  
General Theory ◽  
Small Perturbation ◽  
Adiabatic Approximation ◽  
Green’S Functions ◽  
Spectral Lines ◽  
Dielectric Susceptibility ◽  
Lattice Vibrations ◽  
Subsequent Calculation ◽  
Double Time ◽  
Bound Electron

The theory of the phonon broadening of impurity spectral lines is discussed within the framework of a Kubo-type formulation of the adiabatic dielectric susceptibility and the subsequent calculation of this using double-time Green's functions. The interaction of the bound electron (or hole) with the lattice vibrations is assumed to be weak and is treated as a small perturbation of the independent systems of electron and vibrating lattice; the use of the adiabatic approximation is thereby avoided. The cases in which the bound carrier states are degenerate and nondegenerate are discussed separately. The results are compared with previous work in the field.

Self-Broadening of Molecular Spectral Lines. I. General Theory

1971 ◽  
Vol 4 (6) ◽  
pp. 2170-2178 ◽  
Author(s):  
Y. Ben-Aryeh ◽  
A. Sorgen
Keyword(s):  
General Theory ◽  
Spectral Lines

Extreme self-sacrifice beyond fusion: Moral expansiveness and the special case of allyship

2018 ◽  
Vol 41 ◽  
Author(s):  
Daniel Crimston ◽  
Matthew J. Hornsey
Keyword(s):  
General Theory ◽  
Biological Markers ◽  
Natural Environment ◽  
Relevant Dimension ◽  
Special Case

AbstractAs a general theory of extreme self-sacrifice, Whitehouse's article misses one relevant dimension: people's willingness to fight and die in support of entities not bound by biological markers or ancestral kinship (allyship). We discuss research on moral expansiveness, which highlights individuals’ capacity to self-sacrifice for targets that lie outside traditional in-group markers, including racial out-groups, animals, and the natural environment.

The Interpretation of Line Profiles

1977 ◽  
Vol 36 ◽  
pp. 191-215
Author(s):  
G.B. Rybicki
Keyword(s):  
Magnetic Fields ◽  
Atomic Physics ◽  
Velocity Fields ◽  
Spectral Lines ◽  
Inhomogeneous Structure ◽  
The Sun ◽  
Line Profiles ◽  
Physical Phenomena

Observations of the shapes and intensities of spectral lines provide a bounty of information about the outer layers of the sun. In order to utilize this information, however, one is faced with a seemingly monumental task. The sun’s chromosphere and corona are extremely complex, and the underlying physical phenomena are far from being understood. Velocity fields, magnetic fields, Inhomogeneous structure, hydromagnetic phenomena – these are some of the complications that must be faced. Other uncertainties involve the atomic physics upon which all of the deductions depend.

Current Status of Solid-State X-Ray Systems

1985 ◽  
Vol 43 ◽  
pp. 158-161
Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis
Keyword(s):  
Solid State ◽  
Electric Fields ◽  
Spectral Lines ◽  
Current Status ◽  
Mobile Charge ◽  
Electron Hole ◽  
X Ray ◽  
Sensing Systems ◽  
Transmission Electron ◽  
Electron Microscopes

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.

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