Temperature and frequency dependence of dielectric properties of (Pb, La)(Zr, Sn, Ti)O3antiferroelectric thin films on LaNiO3bottom electrode with different sheet resistance

2008 ◽  
Vol 41 (16) ◽  
pp. 165403 ◽  
Author(s):  
Xihong Hao ◽  
Jiwei Zhai ◽  
Qunping Jia ◽  
Bo Shen ◽  
Xi Yao
2003 ◽  
Vol 83 (14) ◽  
pp. 2892-2894 ◽  
Author(s):  
Z. G. Zhang ◽  
D. P. Chu ◽  
B. M. McGregor ◽  
P. Migliorato ◽  
K. Ohashi ◽  
...  

2006 ◽  
Vol 85 (1) ◽  
pp. 31-38 ◽  
Author(s):  
TIAN-ZHI LIU ◽  
ZHI-GANG ZHANG ◽  
DAN XIE ◽  
CHAO-GANG WEI ◽  
TIAN-LING REN ◽  
...  

2022 ◽  
Vol 3 (1) ◽  
pp. 53-62
Author(s):  
Hari Chandra Nayak ◽  
Shivendra Singh Parmar ◽  
Rajendra Prasad Kumhar ◽  
Shailendra Rajput

In this article, the dielectric properties of poly (9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films are studied. The thin films were grown by the isothermal solution casting technique. Dielectric properties of grown films were studied as function of ferrocene concentration, frequency, and temperature. The relative permittivity (ε′) is increased with increasing ferrocene percentage (~1%) due to the free charge carriers. The relative permittivity decreases for higher ferrocene percentage (~2%). However, the relative permittivity of PVK and ferrocene-doped PVK samples remains almost constant for studied temperature range (313–413 K). The frequency dependence of tan δ for all samples is studied. The frequency dependence of dielectric parameter exhibits frequency dispersion behavior, which suggests all types of polarization present in the lower frequency range. The loss tangent (tanδ) values are larger at higher temperatures in the low frequency region. However, the tan δ values at different temperatures are almost similar in the high frequency region. It is observed that the relative permittivity is maximum, dielectric loss is minimum, and AC conductivity is minimum for 1% ferrocene doped PVK as compared to pure PVK and 2% ferrocene doped PVK samples.


2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  

2001 ◽  
Vol 15 (17n19) ◽  
pp. 774-777 ◽  
Author(s):  
J. CARDOSO ◽  
O. GOMEZ-DAZA ◽  
L. IXTLILCO ◽  
M. T. S. NAIR ◽  
P. K. NAIR

Copper sulfide thin films of 75 nm and 100 nm thickness were coated on Kapton foils (PI) of 25 nm thickness by floating them on a chemical bath. The foils were annealed at 150°C-400°C in N 2 converting the coating from CuS to Cu 1.8 S . The sheet resistance of the annealed coatings (100 nm) is 10-50 ohms/square which is almost unaltered after immersion in dilute HCl for 30-120 min. The infrared reflectance predicted for the coatings is 67%-77% at a wavelength 2.5 μm, which is nearly what is experimentally observed. The coated PI has a transmittance (25-35%) peak located around 550-600 nm. These thermally stable conductive coatings on PI foils might be used as conductive substrates for optoelectronic device structures.


2013 ◽  
Vol 102 (2) ◽  
pp. 022904 ◽  
Author(s):  
Ayan Roy Chaudhuri ◽  
A. Fissel ◽  
V. R. Archakam ◽  
H. J. Osten

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