Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor–metal conductivity transition around room temperature
2009 ◽
Vol 42
(10)
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pp. 105303
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2000 ◽
Vol 39
(Part 2, No. 4B)
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pp. L377-L379
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2003 ◽
Vol 429
(1-2)
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pp. 220-224
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2014 ◽
Vol 55
(3)
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pp. 605-609
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1998 ◽
Vol 99
(1-2)
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pp. 147-160
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