Indium tin oxide films grown at room temperature by RF-magnetron sputtering in oxygen-free environment

2012 ◽  
Author(s):  
D. Kudryashov ◽  
A. Gudovskikh ◽  
K. Zelentsov
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Free Environment ◽  
Tin Oxide Films

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3364-3369 ◽  
Author(s):  
Wenli Deng ◽  
Taizo Ohgi ◽  
Hitoshi Nejo ◽  
Daisuke Fujita
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Tin Oxide Films

Indium Tin Oxide Films Grown at Room Temperature by RF-Magnetron Sputtering in Oxygen-Free Environment

2013 ◽  
Vol 200 ◽  
pp. 10-13 ◽  
Author(s):  
Dmitry Kudryashov ◽  
Alexander Gudovskikh ◽  
Kirill Zelentsov
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Argon Pressure ◽  
Sem Images ◽  
Sputtering Power ◽  
Free Environment ◽  
Ito Films

Indium Tin Oxide (ITO) thin films were grown at room temperature (RT) in oxygen-free environment by rf-magnetron sputtering on glass and Si(100)-substrates. The effects of argon pressure, sputtering power and film thickness on the electrical and optical properties of ITO films were investigated. For a 100 nm thick ITO films grown at RT in argon pressure 1.95∙10-3 mbar and sputtering power of 50 W, the transmittance was near 90% at 500 nm and resistivity was 5.4∙10-4 Ohm∙cm. It has been shown that the sputtering power plays an important role in electric properties of ITO films. SEM images of these samples show smooth surface with sharp substrate/ITO interface.

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