Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations
2009 ◽
Vol 42
(13)
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pp. 135106
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2006 ◽
Vol 21
(8)
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pp. 1047-1052
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2003 ◽
Vol 42
(Part 2, No. 3A)
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pp. L226-L228
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2003 ◽
Vol 0
(7)
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pp. 2257-2260
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