Measurement of the chemical sputtering yields of CH4/CD4 and C2Hx/C2Dx at the carbon divertor plates of JT-60U

2002 ◽  
Vol 42 (6) ◽  
pp. 689-696 ◽  
Author(s):  
T. Nakano ◽  
H. Kubo ◽  
S. Higashijima ◽  
N. Asakura ◽  
H. Takenaga ◽  
...  
Keyword(s):  
Chemical Sputtering ◽  
Sputtering Yields ◽  
Divertor Plates

Chemical sputtering yields of titanium carbides

1982 ◽  
Vol 111-112 ◽  
pp. 744-749 ◽  
Author(s):  
R. Yamada ◽  
K. Nakamura ◽  
M. Saidoh
Keyword(s):  
Chemical Sputtering ◽  
Titanium Carbides ◽  
Sputtering Yields

Measurement of chemical sputtering yields of various types of carbon

1980 ◽  
Vol 95 (3) ◽  
pp. 278-284 ◽  
Author(s):  
R. Yamada ◽  
K. Nakamura ◽  
K. Sone ◽  
M. Saidoh
Keyword(s):  
Chemical Sputtering ◽  
Sputtering Yields

Chemical sputtering yields of silicon resulting from F+, CFn+ (n= 1,2,3) ion bombardment

1982 ◽  
Vol 53 (4) ◽  
pp. 3214-3219 ◽  
Author(s):  
Kiyoshi Miyake ◽  
Shin’ichi Tachi ◽  
Kunihiro Yagi ◽  
Takashi Tokuyama
Keyword(s):  
Ion Bombardment ◽  
Chemical Sputtering ◽  
Sputtering Yields

Universal Energy Dependence of Sputtering Yields At Low Ion Energy

1991 ◽  
Vol 223 ◽  
Author(s):  
J. Muri ◽  
Ch. Steinbrüchel
Keyword(s):  
Noble Gas ◽  
Large Body ◽  
Threshold Energy ◽  
Ion Energy ◽  
Chemical Sputtering ◽  
Physical Sputtering ◽  
Ion Energies ◽  
Atom Interaction ◽  
Physical And Chemical ◽  
Sputtering Yields

ABSTRACTSputtering yields Y(E)at ion energies E keV are shown to be described by the equation Y(E) = A(En - ) where A, n, and the threshold energy Eth are constants characteristic for a particular projectile/target combination. Examination of a wide variety of systems reveals that n = 0.5 provides an excellent universal representation of a large body of data, including physical sputtering of metals by noble gas ions, selfsputtering of metals, as well as physical and chemical sputtering of Si and SiO2. The above value for n is consistent with a 1/r4 power law atom-atom interaction potential within Sigmund's theory of sputtering. Another conclusion is that the effect of Eth on Y(E) must be taken into account at ion energies as high as 1 keV, not just near the sputtering threshold.

Comparison of chemical sputtering yields for different graphites at high ion flux densities

1997 ◽  
Vol 241-243 ◽  
pp. 1152-1155 ◽  
Author(s):  
H. Grote ◽  
W. Bohmeyer ◽  
H.-D. Reiner ◽  
T. Fuchs ◽  
P. Kornejew ◽  
...  
Keyword(s):  
Ion Flux ◽  
Chemical Sputtering ◽  
Sputtering Yields

scholarly journals Chemical sputtering yields of carbon based materials at high ion flux densities

1999 ◽  
Vol 266-269 ◽  
pp. 1059-1064 ◽  
Author(s):  
H. Grote ◽  
W. Bohmeyer ◽  
P. Kornejew ◽  
H.-D. Reiner ◽  
G. Fussmann ◽  
...  
Keyword(s):  
Ion Flux ◽  
Chemical Sputtering ◽  
Sputtering Yields ◽  
Carbon Based

Sputtering Studies Using the Matrix Isolation Technique

1974 ◽  
Vol 28 (1) ◽  
pp. 34-38 ◽  
Author(s):  
David W. Green ◽  
Dieter M. Gruen ◽  
Felix Schreiner ◽  
Jerome L. Lerner
Keyword(s):  
Matrix Isolation ◽  
Oscillator Strengths ◽  
Rare Gas ◽  
Isolation Technique ◽  
Chemical Sputtering ◽  
The Matrix ◽  
Physical And Chemical ◽  
Sputtering Yields ◽  
Good Agreement

The application of the matrix isolation technique to the study of the sputtering process is reported. Equations are derived which relate the experimentally measured absorbance data to the sputtering yield. These equations are applied to data from the sputtering of Nb metal by 50 keV rare gas ions. Relative sputtering yields obtained in this manner are in good agreement with sputtering yields obtained by weight loss measurements. The potential of the technique for studies of both physical and chemical sputtering and for the determination of oscillator strengths is discussed.

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