Universal Energy Dependence of Sputtering Yields At Low Ion Energy

1991 ◽  
Vol 223 ◽  
Author(s):  
J. Muri ◽  
Ch. Steinbrüchel
Keyword(s):  
Noble Gas ◽  
Large Body ◽  
Threshold Energy ◽  
Ion Energy ◽  
Chemical Sputtering ◽  
Physical Sputtering ◽  
Ion Energies ◽  
Atom Interaction ◽  
Physical And Chemical ◽  
Sputtering Yields

ABSTRACTSputtering yields Y(E)at ion energies E keV are shown to be described by the equation Y(E) = A(En - ) where A, n, and the threshold energy Eth are constants characteristic for a particular projectile/target combination. Examination of a wide variety of systems reveals that n = 0.5 provides an excellent universal representation of a large body of data, including physical sputtering of metals by noble gas ions, selfsputtering of metals, as well as physical and chemical sputtering of Si and SiO2. The above value for n is consistent with a 1/r4 power law atom-atom interaction potential within Sigmund's theory of sputtering. Another conclusion is that the effect of Eth on Y(E) must be taken into account at ion energies as high as 1 keV, not just near the sputtering threshold.

Physical and Chemical Sputtering at Very Low Ion Energy: the Importance of the Sputtering Threshold

1988 ◽  
Vol 129 ◽  
Author(s):  
Christoph Steinbruchel
Keyword(s):  
Threshold Energy ◽  
Surface Binding ◽  
Ion Energy ◽  
Chemical Sputtering ◽  
Surface Binding Energy ◽  
Physical Sputtering ◽  
Chemical Etch ◽  
Ion Energies ◽  
The Difference ◽  
Physical And Chemical

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.

THE LUMINESCENCE RESPONSE OF PHOSPHORS TO LOW ENERGY ION BOMBARDMENT

1958 ◽  
Vol 36 (1) ◽  
pp. 104-116
Author(s):  
C. F. Eve ◽  
H. E. Duckworth
Keyword(s):  
Impact Parameter ◽  
Electronic Excitation ◽  
Threshold Energy ◽  
Low Energy ◽  
Experimental Results ◽  
Ion Energy ◽  
Small Impact ◽  
Ion Energies ◽  
Sensitive Function ◽  
Small Impact Parameter

The luminescence response of samples of ZnS:Ag and Zn2SiO4:Mn to bombardment with various ions was determined as a function of the ion energy. For ZnS:Ag, within the range of ion energies studied (E < 25 kev.), the luminescence response, L, is related to the ion energy, E, according to [Formula: see text]. E0 is a threshold energy which is not a very sensitive function of ion mass. For Zn2SiO4:Mn no threshold energy was observed except in the case of Li7+ ions, the lightest ions used with this phosphor. The experimental results for ZnS:Ag appear to be consistent with a theory in which it is assumed that the bombarding particles penetrate the phosphor as neutral atoms and produce luminescence by electronic excitation of the lattice atoms due to small impact parameter collisions.

Swift chemical sputtering of covalently bonded materials

2006 ◽  
Vol 78 (6) ◽  
pp. 1203-1211 ◽  
Author(s):  
K. Nordlund ◽  
E. Salonen ◽  
A. V. Krasheninnikov ◽  
J. Keinonen
Keyword(s):  
Hydrogenated Silicon ◽  
Erosion Rates ◽  
Bonded Materials ◽  
Chemical Sputtering ◽  
Amorphous Hydrogenated Silicon ◽  
Physical Sputtering ◽  
Covalently Bonded ◽  
Wide Range ◽  
Ion Energies ◽  
Atom Level

Numerous experiments have shown that low-energy H ions and neutrals can erode amorphous carbon at ion energies of 1-10 eV, where physical sputtering is impossible, but at erosion rates which are clearly higher than those caused by thermal ions. In this paper, we will first review our computer simulation work providing an atom-level mechanism for how this erosion occurs, and then present some new results for H and He bombardment of tungsten carbide and amorphous hydrogenated silicon (a-Si:H), which indicate the mechanism can be of importance in a wide range of covalently bonded materials. We also discuss how the presented mechanism relates to previously described abstraction and etching mechanisms.

Sputtering of cobalt and chromium by argon and xenon ions near the threshold energy region

1993 ◽  
Vol 71 (3-4) ◽  
pp. 155-158 ◽  
Author(s):  
A. K. Handoo ◽  
P. K. Ray
Keyword(s):  
Quantitative Measurement ◽  
Threshold Energy ◽  
Radioactive Tracer ◽  
Tracer Technique ◽  
Linear Extrapolation ◽  
Radioactive Tracer Technique ◽  
Ion Energies ◽  
Sputtering Yield ◽  
Sputtering Yields ◽  
Threshold Energies

Sputtering yields of cobalt and chromium by argon and xenon ions with energies below 50 eV are reported. The targets were electroplated on copper substrates. Measurable sputtering yields were obtained from cobalt with ion energies as low as 10 eV. The ion beams were produced by an ion gun. A radioactive tracer technique was used for the quantitative measurement of the sputtering yield.57Co and 51Cr were used as tracers. The yield–energy curves are observed to be concave, which brings into question the practice of finding threshold energies by linear extrapolation.

Sputtering Studies Using the Matrix Isolation Technique

1974 ◽  
Vol 28 (1) ◽  
pp. 34-38 ◽  
Author(s):  
David W. Green ◽  
Dieter M. Gruen ◽  
Felix Schreiner ◽  
Jerome L. Lerner
Keyword(s):  
Matrix Isolation ◽  
Oscillator Strengths ◽  
Rare Gas ◽  
Isolation Technique ◽  
Chemical Sputtering ◽  
The Matrix ◽  
Physical And Chemical ◽  
Sputtering Yields ◽  
Good Agreement

The application of the matrix isolation technique to the study of the sputtering process is reported. Equations are derived which relate the experimentally measured absorbance data to the sputtering yield. These equations are applied to data from the sputtering of Nb metal by 50 keV rare gas ions. Relative sputtering yields obtained in this manner are in good agreement with sputtering yields obtained by weight loss measurements. The potential of the technique for studies of both physical and chemical sputtering and for the determination of oscillator strengths is discussed.

scholarly journals Green Silver and Gold Nanoparticles: Biological Synthesis Approaches and Potentials for Biomedical Applications

Molecules ◽  
2021 ◽  
Vol 26 (4) ◽  
pp. 844 ◽  
Author(s):  
Andrea Rónavári ◽  
Nóra Igaz ◽  
Dóra I. Adamecz ◽  
Bettina Szerencsés ◽  
Csaba Molnar ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Biomedical Applications ◽  
Biological Activities ◽  
Large Body ◽  
Chemical Properties ◽  
Biological Synthesis ◽  
Silver And Gold Nanoparticles ◽  
Comprehensive Collection ◽  
Synthetic Approaches ◽  
Physical And Chemical

The nanomaterial industry generates gigantic quantities of metal-based nanomaterials for various technological and biomedical applications; however, concomitantly, it places a massive burden on the environment by utilizing toxic chemicals for the production process and leaving hazardous waste materials behind. Moreover, the employed, often unpleasant chemicals can affect the biocompatibility of the generated particles and severely restrict their application possibilities. On these grounds, green synthetic approaches have emerged, offering eco-friendly, sustainable, nature-derived alternative production methods, thus attenuating the ecological footprint of the nanomaterial industry. In the last decade, a plethora of biological materials has been tested to probe their suitability for nanomaterial synthesis. Although most of these approaches were successful, a large body of evidence indicates that the green material or entity used for the production would substantially define the physical and chemical properties and as a consequence, the biological activities of the obtained nanomaterials. The present review provides a comprehensive collection of the most recent green methodologies, surveys the major nanoparticle characterization techniques and screens the effects triggered by the obtained nanomaterials in various living systems to give an impression on the biomedical potential of green synthesized silver and gold nanoparticles.

Chemical sputtering yields of titanium carbides

1982 ◽  
Vol 111-112 ◽  
pp. 744-749 ◽  
Author(s):  
R. Yamada ◽  
K. Nakamura ◽  
M. Saidoh
Keyword(s):  
Chemical Sputtering ◽  
Titanium Carbides ◽  
Sputtering Yields

Dry Etch Damage in GaAs P-N Junctions

1991 ◽  
Vol 240 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
C. R. Abernathy ◽  
T. R. Fullowan ◽  
J. R. Lothian
Keyword(s):  
Plasma Etching ◽  
Ion Bombardment ◽  
Plasma Exposure ◽  
Base Resistance ◽  
Ion Energy ◽  
Ion Energies ◽  
A Minor ◽  
P Type ◽  
Dry Etch ◽  
Very High

ABSTRACTGaAs p-n junction mesa-diode structures were fabricated so that both n- and p-type layers could be simultaneously exposed to either O2 or H2 discharges. This simulates the ion bombardment during plasma etching with either CCl2F2/O2 or CH4/H2 mixtures. The samples were exposed to 1 mTorr discharges for period of 1–20 min with DC biases of -25 to -400V on the cathode. For O2 ion bombardment, the collector resistance showed only minor (≤10%) increases for biases up to -200 V and more rapid increases thereafter. In our structure, this indicates that bombardment-induced point defects penetrate at least 500 Å of GaAs for ion energies of ≥200eV. The base resistance displayed only a minor increase (∼10%) over the pre-exposure value even for O+ ion energies of 375 eV, due to the very high doping (1020 cm−3 ) in the base. More significant increases in both collector and base resistances were observed for hydrogen ion bombardment due to hydrogen passivation effects. We will give details of this behaviour as a function of ion energy, plasma exposure time and post-treatment annealing temperature.

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