Bound States and the Third Harmonic Generation in an Electric Field Biased Semi-parabolic Quantum Well

2003 ◽  
Vol 40 (5) ◽  
pp. 614-618 ◽  
Author(s):  
Zhang Li ◽  
Xie Hong-Jing
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Harmonic Generation ◽  
Bound States ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third

Third-Harmonic Generation in Special Parabolic Quantum Wells

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu
Keyword(s):  
Quantum Well ◽  
Density Matrix ◽  
Quantum Wells ◽  
Harmonic Generation ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third ◽  
Compact Density ◽  
Asymmetric Quantum ◽  
Parabolic Quantum Wells

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.

Study on the Third-harmonic Generation in Square Tangent Quantum Well

2013 ◽  
Vol 19 (1) ◽  
pp. 12-17
Author(s):  
周丽萍 ZHOU Li-ping ◽  
于凤梅 YU Feng-mei ◽  
唐宇 TANG Yu
Keyword(s):  
Quantum Well ◽  
Harmonic Generation ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third

THIRD-HARMONIC GENERATION OF WURTZITEGaN-BASED COUPLING QUANTUM WELLS WITH STRONG BUILT-IN ELECTRIC FIELDS

2007 ◽  
Vol 21 (27) ◽  
pp. 1837-1845 ◽  
Author(s):  
LI ZHANG
Keyword(s):  
Quantum Well ◽  
Density Matrix ◽  
Quantum Wells ◽  
Electric Fields ◽  
Harmonic Generation ◽  
Structural Parameters ◽  
Third Harmonic Generation ◽  
Matrix Approach ◽  
Third Harmonic ◽  
The Third

Based on the density matrix approach and iterative treatment, the third-harmonic generation (THG) susceptibility of a wurtzite nitride coupling quantum well (CQW) with strong built-in electric fields have been theoretically investigated. The band non-parabolicity effect of nitride heterostructures has been taken into account. A typical wurtzite AlGaN/GaN CQW are chosen to perform numerical calculations. The result shows that, the THG coefficients sensitively depend on the structural parameters of the CQW system. Moreover, a strong THG process can be realized in the nitride CQW by choosing a group of appropriate structural parameters and doped fraction.

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