Temperature-Dependent Photoluminescence in Coupling Structures of CdSe Quantum Dots and a ZnCdSe Quantum Well

2005 ◽  
Vol 22 (6) ◽  
pp. 1518-1521 ◽  
Author(s):  
Jin Hua ◽  
Zhang Li-Gong ◽  
Zheng Zhu-Hong ◽  
An Li-Nan ◽  
Lu You-Ming ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Cdse Quantum Dots ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-Dependent Photoluminescence and Absoprtion of CdSe Quantum dots Embedded in PMMA

2008 ◽  
Vol 52 (5) ◽  
pp. 1510-1513 ◽  
Author(s):  
Tran Thi Kim Chi ◽  
Ung Thi Dieu Thuy ◽  
Nguyen Quang Liem ◽  
Man Hoai Nam ◽  
Do Xuan Thanh
Keyword(s):  
Quantum Dots ◽  
Cdse Quantum Dots ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature dependent photoluminescence of CdSe quantum dots grown in MgS and ZnSe

2004 ◽  
Vol 1 (4) ◽  
pp. 755-758 ◽  
Author(s):  
T. C. M. Graham ◽  
B. Urbaszek ◽  
X. Tang ◽  
C. Bradford ◽  
K. A. Prior ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Cdse Quantum Dots ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-Dependent Photoluminescence Spectra of PbSe Quantum Dots for Temperature Markers

2012 ◽  
Vol 482-484 ◽  
pp. 2547-2550
Author(s):  
Peng Fei Gu ◽  
Ya Nan Wang ◽  
Jia Jia Cao ◽  
Yu Yan ◽  
Tie Qiang Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Sensitivity ◽  
Peak Position ◽  
Strong Temperature Dependence ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Temperature Variations ◽  
Temperature Changes ◽  
Optical Readout ◽  
Temperature Dependent Photoluminescence

We here report the temperature effect on photoluminescence(PL) spectra of PbSe quantum dots (QDs), which exhibit a strong temperature dependence on their spectra position and intensity. They potentially act as the temperature marker, sensing temperature variations and reporting temperature changes remotely through optical readout. In addition, the temperature sensitivity characterized by peak position of PbSe QDs was found to be 0.39nm/°C in a range of 10-100 °C.

Temperature Dependent Photoluminescence Measurements of Single InP Quantum Dots

2007 ◽  
Author(s):  
Matthias Reischle ◽  
Gareth J. Beirne ◽  
Robert Rossbach ◽  
Michael Jetter ◽  
Peter Michler
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Inp Quantum Dots ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence of PbS quantum dots in glass: Evidence of exciton state splitting and carrier trapping

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
Maxim S. Gaponenko ◽  
Andrey A. Lutich ◽  
Nikolai A. Tolstik ◽  
Alexei A. Onushchenko ◽  
Alexander M. Malyarevich ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Exciton State ◽  
Temperature Dependent ◽  
Carrier Trapping ◽  
State Splitting ◽  
Pbs Quantum Dots ◽  
Temperature Dependent Photoluminescence

Laser Power and Temperature Dependent Photoluminescence Characteristics of Annealed GaInNAs/GaAs Quantum Well

2003 ◽  
Vol 799 ◽  
Author(s):  
Ng Tien Khee ◽  
Yoon Soon Fatt ◽  
Fan Weijun
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Quantum Well ◽  
Laser Power ◽  
Laser Excitation ◽  
Excitation Intensity ◽  
Temperature Curve ◽  
Temperature Dependent ◽  
Localization Center ◽  
Temperature Dependent Photoluminescence

ABSTRACTPhotoluminescence (PL) of annealed GaInNAs quantum well (QW) with varying temperature and laser excitation intensity is measured to understand the low temperature PL properties of annealed 6 nm GaInNAs QW. The measurements show that localization effect still exist in the QW even after annealing. This effect is characterized by an activation energy of 11 meV below the e1 state, which is obtained from fitting the integrated PL intensity vs. temperature curve with a single-activation-energy (SAE) model. This center is suggested to be related to the main localization center below the e1 state that could be resulted by N or In compositional fluctuation even after annealing.

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