Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

2006 ◽  
Vol 23 (12) ◽  
pp. 3338-3340 ◽  
Author(s):  
Li Jun-Shuai ◽  
Wang Jin-Xiao ◽  
Yin Min ◽  
Gao Ping-Qi ◽  
He De-Yan
Keyword(s):  
Chemical Vapour Deposition ◽  
Inductively Coupled Plasma ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Vapour Deposition ◽  
Si Films ◽  
Induced Crystallization

scholarly journals Performance Analysis of GaN/AlGaN HEMTs Passivation using Inductively Coupled Plasma Chemical Vapour Deposition and Plasma Enhanced Chemical Vapour Deposition Techniques

2018 ◽  
Vol 68 (6) ◽  
pp. 572
Author(s):  
Sunil Kumar ◽  
Amit Malik ◽  
Dipendra Singh Rawal ◽  
Seema Vinayak ◽  
Hitendra Malik
Keyword(s):  
Chemical Vapour Deposition ◽  
Inductively Coupled Plasma ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Saturation Current ◽  
Gate Leakage Current ◽  
Inductively Coupled ◽  
Plasma Chemical Vapour Deposition ◽  
Gan Hemts ◽  
Deposition Techniques

<p class="p1">In the present paper SiN thin film has been studied as a passivation layer and its effect on AlGaN/GaN HEMTs is investigated using two different deposition techniques i.e PECVD and ICPCVD. AlGaN/GaN HEMTs devices passivated with optimised SiN film have delivered lower gate leakage current (from μA to nA). Device source drain saturation current (I<span class="s2">ds</span>) increased from 400mA/mm to ~550 A/mm and the peak extrinsic trans-conductance increased from 100 mS/mm to 170 mS/mm for a 0.8 μm HEMT device. The optimised SiN passivation process has resulted in reduced current collapse and increased breakdown voltage for HEMT devices.<span class="Apple-converted-space"> </span></p>

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