Influence of the substrate bias on epitaxial growth of Si films by dc-discharge plasma chemical vapour deposition

1998 ◽  
Vol 13 (12) ◽  
pp. 1426-1430 ◽  
Author(s):  
E Mateeva ◽  
P Sutter
Carbon ◽  
1998 ◽  
Vol 36 (5-6) ◽  
pp. 569-574 ◽  
Author(s):  
Hyeongmin Jeon ◽  
Chongmu Lee ◽  
Akimitsu Hatta ◽  
Toshimichi Ito ◽  
Takatomo Sasaki ◽  
...  

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