Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/4/322 ◽

2003 ◽

Vol 18 (4) ◽

pp. 319-324 ◽

Author(s):

Hung-Ming Chuang ◽

Chih-Kai Wang ◽

Kun-Wei Lin ◽

Wen-Hui Chiou ◽

Chun-Yuan Chen ◽

...

Keyword(s):

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.3079798 ◽

2009 ◽

Vol 94 (5) ◽

pp. 053513 ◽

Author(s):

Masataka Higashiwaki ◽

Zhen Chen ◽

Rongming Chu ◽

Yi Pei ◽

Stacia Keller ◽

...

Keyword(s):

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Deposition Method ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

Solid-State Electronics ◽

10.1016/j.sse.2011.04.017 ◽

2011 ◽

Vol 62 (1) ◽

pp. 152-155 ◽

Author(s):

Eiji Miyazaki ◽

Yuji Goda ◽

Shigeru Kishimoto ◽

Takashi Mizutani

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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RF and DC characteristics in Al2O3/Si3N4insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

physica status solidi (a) ◽

10.1002/pssa.200565165 ◽

2006 ◽

Vol 203 (7) ◽

pp. 1861-1865 ◽

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Takashi Maruyama ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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DC Characteristics in Nearly Lattice-Matched InAlN/AlGaN Heterostructure Field-Effect Transistors

10.7567/ssdm.2015.ps-6-11 ◽

2015 ◽

Author(s):

T. Tsutsumi ◽

G. Nishino ◽

J. Freedsman ◽

M. Miyoshi ◽

T. Egawa

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Lattice Matched

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Molecular beam epitaxy of Zn-polar ZnO/BeMgZnO heterostructure field effect transistors on GaN and c-sapphire: a comparative study

Oxide-based Materials and Devices XI ◽

10.1117/12.2550534 ◽

2020 ◽

Author(s):

Kai Ding ◽

Vitaliy S. Avrutin ◽

Natalia Izyumskaya ◽

Ümit Özgür ◽

Hadis Morkoç

Keyword(s):

Molecular Beam Epitaxy ◽

Comparative Study ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates

Electrochemical and Solid-State Letters ◽

10.1149/1.1626992 ◽

2004 ◽

Vol 7 (1) ◽

pp. G8 ◽

Author(s):

Y. Irokawa ◽

B. Luo ◽

F. Ren ◽

C.-C. Pan ◽

G.-T. Chen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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