The effect of H2SiF6on the surface morphology of textured multi-crystalline silicon

2006 ◽  
Vol 21 (9) ◽  
pp. 1278-1286 ◽  
Author(s):  
Wenke Weinreich ◽  
Jörg Acker ◽  
Iris Gräber
2020 ◽  
Vol 38 (2) ◽  
pp. 022415
Author(s):  
Yuta Nakagawa ◽  
Kazuhiro Gotoh ◽  
Markus Wilde ◽  
Shohei Ogura ◽  
Yasuyoshi Kurokawa ◽  
...  

2015 ◽  
Vol 1132 ◽  
pp. 144-159 ◽  
Author(s):  
A.A. Fashina ◽  
K.K. Adama ◽  
M.G. Zebaze Kana ◽  
Winston O. Soboyejo

We investigate the effect of surface texturing on the light trapping properties of Silicon wafers as a function of reflection reduction and surface morphology. This was achieved by structuring a random square-based pyramids pattern on the surface of Silicon substrate using anisotropy etching. The light trapping effect was optimized for silicon solar cells by investigating the dependence of the silicon surface texturing on the process parameters such as etchant concentration, etching time and temperature. We study the surface morphology by analyzing the surface behaviour of the textured substrate using the atomic force microscope and scanning electron microscope. The results of roughness and optical reflection were obtained using the surface profiler and the UV/VIS the spectrometer respectively. In addition, an analytical modelling method was developed to determine the angles of incidence of light rays with each of the facets of the pyramids and the coordinate of the reflected light rays. The method used here is based on 3-D vector geometry of the pyramidal facets. The optimum parameters are found to be 40min, a temperature of 80oC and with KOH/IPA/DI in the ratio [2:4:46] by volume, yielding a surface roughness over 600 nm and a relative optical reflectance in the visible spectrum less than 10%, using polished Si as reference. The results and analysis of both the modelled and measured reflectance, suggest that the performance of the light trapping technique has a big potential in silicon solar cells application.


1984 ◽  
Vol 45 (1) ◽  
pp. 80-82 ◽  
Author(s):  
Ian W. Boyd ◽  
Steven C. Moss ◽  
Thomas F. Boggess ◽  
Arthur L. Smirl

2021 ◽  
Vol 252 ◽  
pp. 02067
Author(s):  
He Wang ◽  
Chunlan Zhou ◽  
Wenjing Wang

Diamond-wire-sawn (DWS) technology has been widely used in the photovoltaic industry. When using the HF/HNO3/H2O acid etching solution for texturing of DWS multi-crystalline silicon(mc-Si), the aid of additive is required to improve the reactivity of the mc-Si surface in the acid texturing solution. It also needs to enhance the nucleation and uniform growth of the texturing surface. This paper proposes a non-metallic additive for DWS mc-Si texturing. Sodium polyacrylate is added to the HF/HNO3/H2O acid etching solution to reduce the reflectance of DWS mc-Si and improve surface morphology. Compared to the textured wafers without additive, the surface of the wafers using this method is uniformly distributed with pits whose size is 0.5 μm×1 μm. And the weighted average reflectance of the textured wafers can be reduced from 33.32% to 23.9% in the wavelength range of 350–1100 nm, with the lowest reflectance of 19.8% reached at 950 nm. It shows a promising application prospect.


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