scholarly journals A non-metallic additive for diamond-wire-sawn multi-crystalline silicon texturing

2021 ◽  
Vol 252 ◽  
pp. 02067
Author(s):  
He Wang ◽  
Chunlan Zhou ◽  
Wenjing Wang
Keyword(s):  
Surface Morphology ◽  
Crystalline Silicon ◽  
Weighted Average ◽  
Acid Etching ◽  
Sodium Polyacrylate ◽  
Diamond Wire ◽  
Etching Solution ◽  
Average Reflectance ◽  
Promising Application ◽  
Metallic Additive

Diamond-wire-sawn (DWS) technology has been widely used in the photovoltaic industry. When using the HF/HNO3/H2O acid etching solution for texturing of DWS multi-crystalline silicon(mc-Si), the aid of additive is required to improve the reactivity of the mc-Si surface in the acid texturing solution. It also needs to enhance the nucleation and uniform growth of the texturing surface. This paper proposes a non-metallic additive for DWS mc-Si texturing. Sodium polyacrylate is added to the HF/HNO3/H2O acid etching solution to reduce the reflectance of DWS mc-Si and improve surface morphology. Compared to the textured wafers without additive, the surface of the wafers using this method is uniformly distributed with pits whose size is 0.5 μm×1 μm. And the weighted average reflectance of the textured wafers can be reduced from 33.32% to 23.9% in the wavelength range of 350–1100 nm, with the lowest reflectance of 19.8% reached at 950 nm. It shows a promising application prospect.

NOHSO4/HF – A Novel Etching System for Crystalline Silicon

2007 ◽  
Vol 62 (11) ◽  
pp. 1411-1421 ◽  
Author(s):  
Sebastian Patzig ◽  
Gerhard Roewer ◽  
Edwin Kroke ◽  
Ingo över
Keyword(s):  
Gas Phase ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Etching Solution ◽  
Wide Range ◽  
Ft Ir ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching System

Solutions consisting of HF - NOHSO4 - H2SO4 exhibit a strong reactivity towards crystalline silicon which is controlled by the concentrations of the reactive species HF and NO+. Selective isotropic and anisotropic wet chemical etching with these solutions allows to generate a wide range of silicon surface morphology patterns. Traces of Ag+ ions stimulate the reactivity and lead to the formation of planarized (polished) silicon surfaces. Analyses of the silicon surface, the etching solution and the gas phase were performed with scanning electron microscopy (SEM), DR/FT-IR (diffusive reflection Fourier transform infra-red), FT-IR, Raman and NMR spectroscopy, respectively. It was found that the resulting silicon surface is hydrogen-terminated. The gas phase contains predominantly SiF4, NO and N2O. Furthermore, NH4+ is produced in solution. The study has confirmed the crucial role of nitrosyl ions for isotropic wet chemical etching processes. The novel etching system is proposed as an effective new way for selective surface texturing of multi- and monocrystalline silicon. A high etching bath service lifetime, besides a low contamination of the etching solution with reaction products, provides ecological and economical advantages for the semiconductor and solar industry.

Surface chemical-bonds analysis of silicon particles from diamond-wire cutting of crystalline silicon

2016 ◽  
Vol 120 (23) ◽  
pp. 235308 ◽  
Author(s):  
Anass Benayad ◽  
Hamza Hajjaji ◽  
Fabrice Coustier ◽  
Malek Benmansour ◽  
Amal Chabli
Keyword(s):  
Crystalline Silicon ◽  
Chemical Bonds ◽  
Surface Chemical ◽  
Diamond Wire ◽  
Wire Cutting ◽  
Silicon Particles

The Effect of Sodium Fluoride in Acid Etching Solution on Sealant Bond and Fluoride Uptake

1980 ◽  
Vol 59 (3) ◽  
pp. 625-630 ◽  
Author(s):  
Yoshikazu Takahashi ◽  
Yukio Arakawa ◽  
Takashi Matsukubo ◽  
Mitsuharu Takeuchi
Keyword(s):  
Sodium Fluoride ◽  
Acid Etching ◽  
Etching Solution ◽  
Fluoride Uptake

Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts

2020 ◽  
Vol 38 (2) ◽  
pp. 022415
Author(s):  
Yuta Nakagawa ◽  
Kazuhiro Gotoh ◽  
Markus Wilde ◽  
Shohei Ogura ◽  
Yasuyoshi Kurokawa ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Titanium Oxide ◽  
Hydrogen Content ◽  
Crystalline Silicon

MnO2/HF/HNO3/H2O System for High-Performance Texturization on Multi-Crystalline Silicon

2019 ◽  
Vol 960 ◽  
pp. 263-267
Author(s):  
Huan Liu ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Wen Jing Wang
Keyword(s):  
High Performance ◽  
Crystalline Silicon ◽  
Weighted Average ◽  
Etching Time ◽  
Component Ratio ◽  
Surface Reflectance ◽  
Simple Processing ◽  
Ratio Range ◽  
Etching System ◽  
Si Wafer

It was found that the addition of MnO2 particles into the HF/HNO3/H2O system could significantly improve the texturization etching performance on multi-crystalline silicon (mc-Si) wafer. For a wide component ratio range of HF/HNO3/H2O from HF-rich to HNO3-rich, by optimizing the MnO2 usage and the etching time, the addition of MnO2 particles always reduced the texture reflectance greatly. Low weighted average surface reflectance (Ra) for the AM1.5G sun spectrum in the wavelength range of 380–1100 nm was achieved on both the slurry wire sliced (SWS) mc-Si and the diamond wire sliced (DWS) mc-Si. Due to its excellent effect and simple processing, the MnO2/HF/HNO3/H2O etching system can be expected as a candidate for high-performance texturization on mc-Si wafer, especially on DWS mc-Si wafer.

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