Electrical evaluation of Cu contamination behavior at the backside surface of a thinned wafer by transient capacitance measurement

2010 ◽  
Vol 26 (2) ◽  
pp. 025007 ◽  
Author(s):  
K-W Lee ◽  
J-C Bea ◽  
T Fukushima ◽  
T Tanaka ◽  
M Koyanagi
Keyword(s):  
Capacitance Measurement ◽  
Cu Contamination ◽  
Transient Capacitance

Evaluation of Cu Contamination at Backside Surface of Thinned Wafer in 3-D Integration by Transient-Capacitance Measurement

2011 ◽  
Vol 32 (1) ◽  
pp. 66-68 ◽  
Author(s):  
Jichel Bea ◽  
Kangwook Lee ◽  
Takafumi Fukushima ◽  
Tetsu Tanaka ◽  
Mitsumasa Koyanagi
Keyword(s):  
Capacitance Measurement ◽  
Cu Contamination ◽  
Transient Capacitance

Edge Effect on the Determination of Capture Rate of Minority Carriers from Transient Capacitance Measurement

1992 ◽  
Vol 31 (Part 1, No. 5A) ◽  
pp. 1403-1404
Author(s):  
Hajime Tomokage ◽  
Hidefumi Kamibayashi ◽  
Tokuo Miyamoto
Keyword(s):  
Edge Effect ◽  
Capture Rate ◽  
Capacitance Measurement ◽  
Transient Capacitance ◽  
Minority Carriers

Low Level Cu Contamination of Silicon During Wet Cleaning Studied by Transient Ion Drift

1997 ◽  
Vol 469 ◽  
Author(s):  
T. Heiser ◽  
S. Mchugo ◽  
H. Hieslmair ◽  
E. R. Weber
Keyword(s):  
Aqueous Solution ◽  
Copper Concentration ◽  
Thermal Quenching ◽  
High Temperature Annealing ◽  
Chemical Cleaning ◽  
Ion Drift ◽  
Cu Contamination ◽  
Transient Capacitance ◽  
General Expectation ◽  
Copper Contaminated

ABSTRACTInterstitial copper (CUi) drift induced transient capacitance signals of a Schottky barrier are analysed after copper indiffusion at various temperatures and thermal quenching. Against the general expectation we show that most Cu impurities remain interstitially dissolved. Consequently, such transient ion drift analyses can be used to detect copper in silicon with a detection limit of the order of 1011cm−3. We applied the method to study Cu contamination of silicon samples after chemical cleaning and high temperature annealing. After a short dip into a copper contaminated aqueous solution and subsequent annealing at 1000C for 10 minutes, a strong correlation is found between the bulk copper concentration and the copper density in the solution. A density as low as 50 atomic parts per billion is found to be sufficient to induce a bulk copper concentration of about 5.1013cm−3.

Evaluation of Cu Diffusion From Cu Through-Silicon Via (TSV) in Three-Dimensional LSI by Transient Capacitance Measurement

2011 ◽  
Vol 32 (7) ◽  
pp. 940-942 ◽  
Author(s):  
Jichel Bea ◽  
Kangwook Lee ◽  
Takafumi Fukushima ◽  
Tetsu Tanaka ◽  
Mitsumasa Koyanagi
Keyword(s):  
Three Dimensional ◽  
Capacitance Measurement ◽  
Through Silicon Via ◽  
Transient Capacitance

Transient capacitance measurement of MEM capacitor

2005 ◽  
Vol 117 (2) ◽  
pp. 267-272 ◽  
Author(s):  
Heikki Nieminen ◽  
Jari Hyyryläinen ◽  
Timo Veijola ◽  
Tapani Ryhänen ◽  
Vladimir Ermolov
Keyword(s):  
Capacitance Measurement ◽  
Transient Capacitance
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