Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Temperature Transient ◽

Transient Capacitance

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances ◽

10.1063/1.4963740 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095021 ◽

Cited By ~ 7

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Temperature Transient ◽

Transient Capacitance

High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

Applied Physics Letters ◽

10.1063/1.3596440 ◽

2011 ◽

Vol 98 (22) ◽

pp. 223504 ◽

Cited By ~ 21

Author(s):

S. C. Hung ◽

C. W. Chen ◽

C. Y. Shieh ◽

G. C. Chi ◽

R. Fan ◽

...

Keyword(s):

Carbon Monoxide ◽

Zinc Oxide ◽

Electron Mobility ◽

Room Temperature ◽

High Sensitivity ◽

High Electron ◽

High Electron Mobility ◽

Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2005.12.115 ◽

2006 ◽

Vol 32 (1-2) ◽

pp. 566-568 ◽

Cited By ~ 5

Author(s):

Kun-Ta Wu ◽

P.H. Chang ◽

S.T. Lien ◽

N.C. Chen ◽

Ching-An Chang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

P Type

Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab07a2 ◽

2019 ◽

Vol 58 (SC) ◽

pp. SCCB11 ◽

Cited By ~ 1

Author(s):

Mei Wu ◽

Meng Zhang ◽

Qing Zhu ◽

Ling Yang ◽

Xiaohua Ma ◽

...

Keyword(s):

Electron Mobility ◽

Resistance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Self Heating ◽

Channel Resistance

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5MeV protons

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.01.052 ◽

2011 ◽

Vol 326 (1) ◽

pp. 62-64 ◽

Cited By ~ 14

Author(s):

Hong-Yeol Kim ◽

Travis Anderson ◽

Michael A. Mastro ◽

Jaime A. Freitas ◽

Soohwan Jang ◽

...

Keyword(s):

Electron Mobility ◽

Electrical Characterization ◽

High Electron ◽

High Electron Mobility ◽

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

Journal of Applied Physics ◽

10.1063/1.3457356 ◽

2010 ◽

Vol 108 (1) ◽

pp. 013711 ◽

Cited By ~ 4

Author(s):

R. T. Green ◽

I. J. Luxmoore ◽

K. B. Lee ◽

P. A. Houston ◽

F. Ranalli ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Dry Etch

Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.7939 ◽

2004 ◽

Vol 43 (12) ◽

pp. 7939-7943 ◽

Cited By ~ 15

Author(s):

Makoto Miyoshi ◽

Masahiro Sakai ◽

Subramaniam Arulkumaran ◽

Hiroyasu Ishikawa ◽

Takashi Egawa ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

Metalorganic Vapor Phase Epitaxy ◽

High Electron ◽

High Electron Mobility ◽

Al Content ◽

Sapphire Substrates ◽

Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Chinese Physics B ◽

10.1088/1674-1056/20/2/027304 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027304 ◽

Cited By ~ 9

Author(s):

Xiao-Hua Ma ◽

Cai-Yuan Pan ◽

Li-Yuan Yang ◽

Hui-You Yu ◽

Ling Yang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Gate Recess

Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates

IEEE Transactions on Electron Devices ◽

10.1109/16.485533 ◽

1996 ◽

Vol 43 (4) ◽

pp. 527-534 ◽

Cited By ~ 5

Author(s):

T. Aigo ◽

M. Goto ◽

Y. Ohta ◽

A. Jono ◽

A. Tachikawa ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽